MBR4045WT datasheet, PDF - EEWORLD Datasheet

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MBR4045WT: Description20 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AD; CategoryDiscrete semiconductor diode; File Size124KB，2 Pages; ManufacturerDigitron; Websitehttp://www.digitroncorp.com

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MBR4045WT Overview

20 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AD

MBR4045WT Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Digitron
package instruction	R-PSFM-T3
Reach Compliance Code	unknow
application	GENERAL PURPOSE
Shell connection	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.8 V
JEDEC-95 code	TO-247
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Maximum non-repetitive peak forward current	400 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	20 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	45 V
Maximum reverse current	1000 µA
surface mount	NO
technology	SCHOTTKY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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DIGITRON SEMICONDUCTORS

MBR4045WT

MAXIMUM RATINGS

Rating

Peak repetitive reverse voltage

Working peak reverse voltage

DC blocking voltage

Average rectified forward current

(Rated V

R

)

Peak repetitive forward current

(Rated V

R

, square wave, 20 kHz)

Peak repetitive reverse surge current

(2.0µs, 1.0 kHz)

Non-repetitive peak surge current

(surge applied at rated load conditions, halfwave, single phase, 60Hz)

Operating junction temperature range

Storage junction temperature range

Peak surge junction temperature

(forward current applied)

Voltage rate of change

(Rated V

R

)

Maximum thermal resistance

Junction to case

Junction to ambient

(1)

40A SCHOTTKY RECTIFIER

Symbol

V

RRM

V

RWM

V

R

I

F(AV)

I

FRM

I

RRM

I

FSM

T

J,

T

stg

T

J(pk)

dv/dt

R

ӨJC

R

ӨJA

MBR4045WT

45

40 @ T

C

= 125°C

40 @ T

C

= 90°C

2

400

-65 to +175

175

10000

1.4

50.1

Unit

V

A

°C

V/µs

°C/W

ELECTRICAL CHARACTERISTICS

(T

C

= 25°C unless otherwise noted)

Parameter

Instantaneous forward voltage

(I

F

= 20A, T

C

= 25°C)

(I

F

= 20A, T

C

= 125°C)

(I

F

= 40A, T

C

= 25°C)

(I

F

= 40A, T

C

= 125°C)

Instantaneous reverse current

(Rated dc voltage, T

C

= 25°C)

(Rated dc voltage, T

C

= 100°C)

(2)

Symbol

MBR4045WT

Typical

0.52

0.47

0.65

0.63

0.09

7.5

Maximum

070

0.60

0.80

0.75

1.0

50

Unit

V

F

V

(2)

I

R

mA

Note 1: The heat generated must be less than the thermal conductivity from junction-to-ambient: dP

D

/dT

J

< 1/R

ӨJA

.

Note 2: Pulse test: Pulse width = 300µs, duty cycle

≤

2.0%.

MECHANICAL CHARACTERISTICS

Case

Marking

Pin out

TO-247

Alpha-numeric

See below

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

Rev. 20121205

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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