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MBR6025L

Description
60 A, 25 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size866KB,4 Pages
ManufacturerDigitron
Websitehttp://www.digitroncorp.com
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MBR6025L Overview

60 A, 25 V, SILICON, RECTIFIER DIODE

MBR6025L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDigitron
Reach Compliance Codeunknow
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.48 V
JEDEC-95 codeDO-5
JESD-30 codeO-MUPM-D1
JESD-609 codee0
Maximum non-repetitive peak forward current1000 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current60 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage25 V
Maximum reverse current50000 µA
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
DIGITRON SEMICONDUCTORS
MBR6015L-MBR6030L
60A ULTRA FAST RECOVERY RECTIFIER
MAXIMUM RATINGS
Rating
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Average rectified forward current
(Rated V
R
)
Peak repetitive forward current
(Rated V
R
, square wave, 20 kHz)
Peak repetitive reverse surge current
(2.0µs, 1.0 kHz)
Non-repetitive peak surge current
(surge applied at rated load conditions, halfwave, single phase, 60Hz)
Operating junction temperature range
Storage junction temperature range
Voltage rate of change
(Rated V
R
)
Maximum thermal resistance
Junction to case
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
RRM
I
FSM
T
J
T
stg
dv/dt
R
ӨJC
MBR
6015L
15
6020L
20
6025L
25
6030L
30
Unit
V
A
A
A
A
°C
°C
V/µs
°C/W
60 @ T
C
= 120°C
150 @ T
C
= 90°C
2
1000
-65 to +150
-65 to +175
1000
0.8
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Parameter
Maximum instantaneous forward voltage
(I
F
= 30A, T
C
= 25°C)
(I
F
= 60A, T
C
= 25°C)
(I
F
= 30A, T
C
= 150°C)
(I
F
= 60A, T
C
= 150°C)
Maximum instantaneous reverse current
(Rated dc voltage, T
C
= 25°C)
(Rated dc voltage, T
C
= 125°C)
Capacitance
(V
R
= 1Vdc, 100 kHz
f
1MHz)
Note 1: Pulse test: Pulse width = 300µs, duty cycle = 2.0%.
(1)
Symbol
MBR
6015L
6020L
6025L
6030L
Unit
V
F
0.42
0.48
0.30
0.38
50
280
6000
V
(1)
I
R
mA
C
t
pF
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121205

MBR6025L Related Products

MBR6025L MBR6015L MBR6020L MBR6030L
Description 60 A, 25 V, SILICON, RECTIFIER DIODE 60 A, 15 V, SILICON, RECTIFIER DIODE 60 A, 20 V, SILICON, RECTIFIER DIODE 60 A, 30 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Digitron Digitron Digitron Digitron
Reach Compliance Code unknow unknow unknow unknow
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection CATHODE CATHODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.48 V 0.48 V 0.48 V 0.48 V
JEDEC-95 code DO-5 DO-5 DO-5 DO-5
JESD-30 code O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
JESD-609 code e0 e0 e0 e0
Maximum non-repetitive peak forward current 1000 A 1000 A 1000 A 1000 A
Number of components 1 1 1 1
Phase 1 1 1 1
Number of terminals 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C
Maximum output current 60 A 60 A 60 A 60 A
Package body material METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 25 V 15 V 20 V 30 V
Maximum reverse current 50000 µA 50000 µA 50000 µA 50000 µA
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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