DIGITRON SEMICONDUCTORS
MCR100 SERIES
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive off-state voltage
(1)
(T
J
= -40 to +110°C, sine wave, 50 to 60Hz, gate open)
MCR100-3
MCR100-4
MCR100-5
MCR100-6
MCR100-7
MCR100-8
On-state RMS current
(180° conduction angles, T
C
= 80°C)
Peak non-repetitive surge current
(half-cycle, sine wave, 60Hz, T
J
= 25°C)
Circuit fusing consideration
(t = 8.3ms)
Forward peak gate power
(pulse width
≤
1.0µs, T
A
= 25°C)
Forward average gate power
(t = 8.3ms, T
A
= 25°C)
Forward peak gate current
(pulse width
≤
1.0µs, T
A
= 25°C)
Reverse peak gate voltage
(pulse width
≤
1.0µs, T
A
= 25°C)
Operating junction temperature range
@ rated V
RRM
and V
DRM
Storage temperature range
Symbol
Value
Unit
V
DRM
V
RRM
100
200
300
400
500
600
0.8
10
0.415
0.1
0.10
1.0
5.0
-40 to +110
-40 to +150
V
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
GRM
T
J
T
stg
A
A
A
2
s
W
W
A
V
°C
°C
Note 1: V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Lead solder temperature
(lead length < 1/16” from case, 10s max)
Symbol
R
ӨJC
R
ӨJA
T
L
Maximum
75
200
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(2)
(V
AK
= Rated V
DRM
or V
RRM
, R
GK
= 1kΩ)
T
C
= 25°C
T
C
= 110°C
ON CHARACTERISTICS
Peak forward on-state voltage
*
(I
TM
= 1.0A peak, @ T
A
= 25°C)
Gate trigger current
(continuous dc)
(3)
(V
AK
= 7V, R
L
= 100Ω, T
C
= 25°C)
Holding current
(2)
(
V
AK
= 7V, initiating current = 20mA)
T
C
= 25°C
T
C
= -40°C
Latch current
(V
AK
= 7V, I
g
= 200µA)
T
C
= 25°C
T
C
= -40°C
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
Symbol
Min
Typ
Max
Unit
I
DRM,
I
RRM
-
-
-
-
10
100
µA
V
TM
I
GT
-
-
-
40
1.7
200
V
µA
I
H
-
-
0.5
-
5.0
10
mA
I
L
-
-
0.6
-
10
15
mA
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130109
DIGITRON SEMICONDUCTORS
MCR100 SERIES
Characteristic
Gate trigger voltage (continuous dc)
(3)
(V
AK
= 7V, R
L
= 100Ω)
T
C
= 25°C
T
C
= -40°C
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage
(V
D
= rated V
DRM
, exponential waveform, R
GK
= 1000Ω, T
J
= 110°C)
Critical rate of rise of on-state current
(I
PK
= 20A, PW = 10µsec, di
G
/dt = I
gt
= 20mA)
Note 2: R
GK
= 1000Ω included in measurement.
Note 3: Does not include R
GK
in measurement.
* Pulse test: pulse width
≤
1.0ms, duty cycle
≤
1%.
SILICON CONTROLLED RECTIFIERS
Symbol
Min
Typ
Max
Unit
V
GT
-
-
0.62
-
0.8
1.2
V
dv/dt
di/dt
20
-
35
-
-
50
V/µs
A/µs
MECHANICAL CHARACTERISTICS
Case
Marking
Pin out
TO-92
Alpha-numeric
See below
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130109
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