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Datasheet> All Categories > LED optoelectronic/LED> photoelectric> PS2761-1
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PS2761-1

Description
Transistor Output Optocoupler, 1-Element, 3750V Isolation, PLASTIC, SOP-4
CategoryLED optoelectronic/LED    photoelectric   
File Size97KB，10 Pages
ManufacturerNEC Electronics
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PS2761-1 Overview

Transistor Output Optocoupler, 1-Element, 3750V Isolation, PLASTIC, SOP-4

PS2761-1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionPLASTIC, SOP-4
Reach Compliance Codecompliant
Other featuresUL APPROVED
Coll-Emtr Bkdn Voltage-Min40 V
ConfigurationSINGLE
Nominal current transfer ratio100%
Maximum dark power100 nA
Maximum forward current0.05 A
Maximum insulation voltage3750 V
JESD-609 codee0
Number of components1
Maximum operating temperature100 °C
Minimum operating temperature-55 °C
Optoelectronic device typesTRANSISTOR OUTPUT OPTOCOUPLER
Terminal surfaceTin/Lead (Sn/Pb)

PS2761-1 Preview

DATA SHEET
PHOTOCOUPLER
PS2761-1
HIGH ISOLATION VOLTAGE
4-PIN SOP PHOTOCOUPLER
−NEPOC
Series−
DESCRIPTION
The PS2761-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
phototransistor.
This package is mounted in a plastic SOP (Small Outline Package) for high density applications.
The package has shield effect to cut off ambient light.
FEATURES
• Isolation distance (0.4 mm MIN.)
• High isolation voltage (BV = 3 750 Vr.m.s.)
• SOP (Small Outline Package) type
• High-speed switching (t
r
= 4
µ
s TYP., t
f
= 5
µ
s TYP.)
• Ordering number of taping product: PS2761-1-F3, F4
• UL approved: File No. E72422 (S)
• BSI approved: No. 8436/8437
APPLICATIONS
• Hybrid IC
• Programmable logic controllers
• Power supply
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PN10249EJ01V0DS (1st edition)
(Previous No. P14143EJ3V0DS00)
Date Published February 2003 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Compound Semiconductor Devices 1998, 2003
PS2761-1
PACKAGE DIMENSIONS (Unit: mm)
4±0.5
TOP VIEW
4
3
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
7.0±0.3
4.4
2.1±0.2
0.1±0.1
2.54
0.4
+0.10
–0.05
0.25 M
0.15
+0.10
–0.05
0.5±0.3
PHOTOCOUPLER CONSTRUCTION
Parameter
Air Distance
Creepage Distance
Isolation Distance
Unit (MIN.)
5 mm
5 mm
0.4 mm
2
Data Sheet PN10249EJ01V0DS
PS2761-1
ORDERING INFORMATION
Part Number
PS2761-1
PS2761-1-F3
PS2761-1-F4
Package
4-pin SOP
Packing Style
Magazine case 100 pcs
Embossed Tape 3 500 pcs/reel
Application Part Number
PS2761-1
*1
*1
For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C, unless otherwise specified)
Parameter
Diode
Forward Current (DC)
Reverse Voltage
Power Dissipation Derating
Power Dissipation
Peak Forward Current
Transistor
*1
Symbol
I
F
V
R
Ratings
50
6
0.8
80
1.0
40
5
40
1.5
150
3 750
–55 to +100
–55 to +150
Unit
mA
V
mW/°C
mW
A
V
V
mA
mW/°C
mW
Vr.m.s.
°C
°C
∆
P
D
/°C
P
D
I
FP
V
CEO
V
ECO
I
C
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation Derating
Power Dissipation
∆
P
C
/°C
P
C
BV
T
A
T
stg
Isolation Voltage
*2
Operating Ambient Temperature
Storage Temperature
*1
PW = 100
µ
s, Duty Cycle = 1 %
*2
AC voltage for 1 minute at T
A
= 25 °C, RH = 60 % between input and output
Data Sheet PN10249EJ01V0DS
3
PS2761-1
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
Transistor
Collector to Emitter Dark
Current
Current Transfer Ratio
*1
(I
C
/I
F
)
Collector Saturation
Voltage
Isolation Resistance
Isolation Capacitance
Rise Time
Fall Time
*2
Symbol
V
F
I
R
C
t
I
CEO
I
F
= 5 mA
V
R
= 5 V
Conditions
MIN.
TYP.
1.1
MAX.
1.4
5
Unit
V
µ
A
pF
V = 0 V, f = 1 MHz
I
F
= 0 mA, V
CE
= 40 V
15
100
nA
Coupled
CTR
I
F
= 5 mA, V
CE
= 5 V
50
100
400
%
V
CE (sat)
I
F
= 10 mA, I
C
= 2 mA
0.3
V
Ω
R
I-O
C
I-O
t
r
t
f
V
I-O
= 1 kV
DC
V = 0 V, f = 1 MHz
V
CC
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
10
11
0.4
4
5
pF
µ
s
*2
*1
CTR rank
K: 200 to 400 (%)
M: 50 to 150 (%)
L: 100 to 300 (%)
N: 50 to 400 (%)
*2
Test circuit for switching time
Pulse Input
PW = 100
µ
s
Duty cycle = 1/10
I
F
In monitor
50
Ω
R
L
= 100
Ω
V
OUT
V
CC
4
Data Sheet PN10249EJ01V0DS
PS2761-1
TYPICAL CHARACTERISTICS (T
A
= 25
°
C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
210
180
150
120
90
60
30
0
25
50
75
100
100
Diode Power Dissipation P
D
(mW)
80
60
40
20
0
25
50
75
100
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
( ˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
30
I
F
= 25 mA
20 mA
15 mA
10 mA
10
Collector Current I
C
(mA)
Forward Current I
F
(mA)
T
A
= +100 ˚C
+60 ˚C
+25 ˚C
25
20
15
10
5
5 mA
1
0 ˚C
–25 ˚C
–50 ˚C
0.1
0.01
0.0
0.5
1.0
1.5
2.0
0
2
4
6
8
10
Forward Voltage V
F
(V)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
100
10 mA
5 mA
2 mA
10
10 000
1 000
V
CE
= 20 V
40 V
100
Collector Current I
C
(mA)
1
I
F
= 1mA
10
1
–25
0
25
50
75
100
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
(˚C)
Collector Saturation Voltage V
CE(sat)
(V)
Data Sheet PN10249EJ01V0DS
5
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