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PEMD16

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size399KB,12 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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PEMD16 Overview

Small Signal Bipolar Transistor

PEMD16 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codecompliant
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 2.1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN AND PNP
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON

PEMD16 Preview

Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PEMD16; PUMD16
NPN/PNP resistor-equipped transistors;
R1 = 22 k, R2 = 47 k
Rev. 3 — 28 June 2011
Product data sheet
1. Product profile
1.1 General description
NPN/PNP resistor-equipped transistors.
Table 1.
Product overview
Package
NXP
PEMD16
PUMD16
SOT666
SOT363
JEITA
-
SC-88
PNP/PNP
complement
PEMB16
PUMB16
NPN/NPN
complement
PEMH16
PUMH16
Type number
1.2 Features and benefits
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place cost
1.3 Applications
Low current peripheral driver
Control of IC inputs
Replacement of general-purpose transistors in digital applications
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
15.4
1.7
Typ
-
-
22
2.1
Max
50
100
28.6
2.6
Unit
V
mA
k
NXP Semiconductors
PEMD16; PUMD16
NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
1
2
3
001aab555
TR1
R2
R1
R1
R2
TR2
Simplified outline
6
5
4
Graphic symbol
6
5
4
1
2
3
006aaa143
3. Ordering information
Table 4.
Ordering information
Package
Name
PEMD16
PUMD16
-
SC-88
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 6 leads
Version
SOT666
SOT363
Type number
4. Marking
Table 5.
PEMD16
PUMD16
[1]
* = placeholder for manufacturing site code
Marking codes
Marking code
[1]
5H
D1*
Type number
PEMD16_PUMD16
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 28 June 2011
2 of 11
NXP Semiconductors
PEMD16; PUMD16
NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
positive
negative
input voltage TR2
positive
negative
I
O
I
CM
P
tot
output current
peak collector current
total power dissipation
SOT363
SOT666
T
stg
T
j
T
amb
Per device
P
tot
total power dissipation
SOT363
SOT666
[1]
[2]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
-
-
-
Max
50
50
5
+40
7
+7
40
100
100
200
200
+150
150
+150
Unit
V
V
V
V
V
V
V
mA
mA
mW
mW
C
C
C
Per transistor; for the PNP transistor with negative polarity
T
amb
25
C
[1]
[1][2]
-
-
65
-
65
storage temperature
junction temperature
ambient temperature
T
amb
25
C
[1]
[1][2]
-
-
300
300
mW
mW
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
PEMD16_PUMD16
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 28 June 2011
3 of 11
NXP Semiconductors
PEMD16; PUMD16
NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT363
SOT666
Per device
R
th(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
[1]
[2]
Conditions
in free air
[1]
[1][2]
Min
Typ
Max
Unit
Per transistor
-
-
-
-
625
625
K/W
K/W
in free air
[1]
[1][2]
-
-
-
-
416
416
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter
I
CBO
I
CEO
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
TR1 (NPN)
TR2 (PNP)
V
CB
=
10
V;
I
E
= i
e
= 0 A; f = 1 MHz
-
-
-
-
2.5
3
pF
pF
Conditions
V
CB
= 50 V; I
E
= 0 A
V
CE
= 30 V; I
B
= 0 A
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150
C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
V
CE
= 5 V; I
C
= 100
A
V
CE
= 0.3 V; I
C
= 2 mA
Min
-
-
-
-
80
-
-
2
15.4
1.7
Typ
-
-
-
-
-
-
0.8
1.1
22
2.1
Max
100
1
50
120
-
150
0.5
-
28.6
2.6
mV
V
V
k
Unit
nA
A
A
A
Per transistor; for the PNP transistor with negative polarity
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1
R2/R1
C
c
PEMD16_PUMD16
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 28 June 2011
4 of 11

PEMD16 Related Products

PEMD16 PUMD16
Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor
Is it Rohs certified? conform to conform to
Maker Nexperia Nexperia
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code compliant compliant
Other features BUILT-IN BIAS RESISTOR RATIO IS 2.1 BUILT-IN BIAS RESISTOR RATIO IS 2.1
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 80 80
JESD-30 code R-PDSO-G6 R-PDSO-G6
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 2 2
Number of terminals 6 6
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN AND PNP NPN AND PNP
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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