P4SMA SERIES
Taiwan Semiconductor
CREAT BY ART
400W, 6.8V - 200V Surface Mount Transient Voltage Suppressor
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Excellent clamping capability
- Fast response time: Typically less than 1.0ps
- Typical I
R
less than 1μA above 10V
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DO-214AC (SMA)
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound: UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25°C, tp=1ms (Note 1)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 25 A for
unidirectional only
Operating junction temperature range
Storage temperature range
SYMBOL
P
PK
I
FSM
V
F
T
J
T
STG
VALUE
400
40
3.5
- 55 to +150
- 55 to +150
UNIT
W
A
V
°C
°C
Note 1: Non-repetitive current pulse per fig. 3 and derated above T
A
=25°C per fig. 2
Devices for bipolar applications
1. For bidirectional use C or CA suffix for types P4SMA6.8 - types P4SMA200A
2. Electrical characteristics apply in both directions
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING CODE
R3
R2
P4SMAxxxx
(Note 1)
H
M2
F3
F2
F4
Note 1: "xxxx" defines voltage from 6.8V (P4SMA6.8) to 200V (P4SMA200A)
*: Optional available
G
PACKING CODE
SUFFIX
(*)
PACKAGE
SMA
SMA
SMA
Folded SMA
Folded SMA
Folded SMA
PACKING
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
EXAMPLE
EXAMPLE
PART NO.
P4SMA200AHR3G
PART NO.
P4SMA200A
PART NO.
SUFFIX
H
PACKING CODE
R3
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
Version: O1512
P4SMA SERIES
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
Non-repetitive
pulse waveform
shown in fig.3
10
125
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
FIG.2 PULSE DERATING CURVE
P
PPM
, PEAK PULSE POWER, KW
100
75
50
25
0
0
25
50
75
100
125
150
175
200
1
0.1
0.1
1
10
100
1000
10000
tp, PULSE WIDTH, (μs)
T
A
, AMBIENT TEMPERATURE (
°
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
IFSM, PEAK FORWARD SURGE CURRENT (A)
140
PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
50
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
tr=10μs
Peak value
I
PPM
8.3ms single half sine wave
40
Half value-I
PPM
/2
10/1000μs, waveform
as defined by R.E.A.
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100000
CJ, JUNCTION CAPACITANCE (pF)
A
10000
V
R
=0
1000
Measured at
stand-off
voltage, Vwm
100
f=1.0MHz
Vsig=50mVp-p
10
1
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
Version: O1512
P4SMA SERIES
Taiwan Semiconductor
Device
Marking
Code
CLJ
CMJ
CNJ
CPJ
CQJ
CRJ
CSJ
CTJ
CUJ
CVJ
CWJ
CXJ
CYJ
CZJ
RDJ
REJ
RFJ
RGJ
RHJ
RKJ
RLJ
RMJ
RNJ
RPJ
RQJ
RRJ
RSJ
RTJ
Breakdown Voltage
V
BR
(V)
(Note 1)
Min
P4SMA62
P4SMA62A
P4SMA68
P4SMA68A
P4SMA75
P4SMA75A
P4SMA82
P4SMA82A
P4SMA91
P4SMA91A
P4SMA100
P4SMA100A
P4SMA110
P4SMA110A
P4SMA120
P4SMA120A
P4SMA130
P4SMA130A
P4SMA150
P4SMA150A
P4SMA160
P4SMA160A
P4SMA170
P4SMA170A
P4SMA180
P4SMA180A
P4SMA200
P4SMA200A
Notes:
1. V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. For bipolar types having V
WM
of 10 volts and under, the I
D
limit is doubled.
4. For bidirectional use C or CA suffix for types PS4MA6.8 through P4SMA200A.
5. All terms and symbols are consistent with ANSI/IEEE C62.35.
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90
95
99
105
108
114
117
124
135
143
144
152
153
162
162
171
180
190
Max
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-Off
Voltage
V
WM
(V)
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
Maximum
@ V
WM
I
R
(μA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Current I
PPM
(A) (Note 2)
4.7
5.0
4.2
4.5
3.8
4.0
3.5
3.7
3.2
3.3
2.9
3.0
2.6
2.7
2.4
2.5
2.2
2.3
1.9
2.0
1.8
1.9
1.7
1.8
1.6
1.7
1.4
1.51
Maximum
@ I
PPM
Vc (V)
89.0
85.0
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
Maximum
Coefficient
of V
BR
(%/°C)
0.104
0.104
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
Device
Reverse Leakage Peak Pulse
Clamping Voltage Temperature
Version: O1512
DSP and ARM Processors
京公网安备 11010802033920号
EEWORLD
