MT8HTF3264HTY-40EXX datasheet, PDF

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MT8HTF3264HTY-40EXX: DescriptionDDR DRAM Module, 32MX64, CMOS, LEAD FREE, SODIMM-200; Categorystorage storage; File Size365KB，19 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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MT8HTF3264HTY-40EXX Overview

DDR DRAM Module, 32MX64, CMOS, LEAD FREE, SODIMM-200

MT8HTF3264HTY-40EXX Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Micron Technology
Parts packaging code	MODULE
package instruction	DIMM,
Contacts	200
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Other features	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N200
JESD-609 code	e4
length	67.6 mm
memory density	2147483648 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	200
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	32MX64
Package body material	UNSPECIFIED
encapsulated code	DIMM
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	3.8 mm
self refresh	YES
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Gold (Au)
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	30.5 mm

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256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM

Features

DDR2 SDRAM SODIMM

MT8HTF3264HDY – 256MB

MT8HTF6464HDY – 512MB

MT8HTF12864HDY – 1GB

Features

•

200-pin, small-outline dual in-line memory module

(SODIMM)

•

Fast data transfer rates: PC2-3200, PC2-4200,

PC2-5300, or PC2-6400

•

256MB (32 Meg x 64), 512MB (64 Meg x 64), or 1GB

(128 Meg x 64)

•

= 1.8V

•

DDSPD

= 1.7–3.6V

•

JEDEC-standard 1.8V I/O (SSTL_18-compatible)

•

Differential data strobe (DQS, DQS#) option

•

4n-bit prefetch architecture

•

Multiple internal device banks for concurrent opera-

tion

•

Programmable CAS latency (CL)

•

Posted CAS additive latency (AL)

•

WRITE latency = READ latency - 1

•

Programmable burst lengths (BL): 4 or 8

•

Adjustable data-output drive strength

•

64ms, 8192-cycle refresh

•

On-die termination (ODT)

•

Serial presence detect (SPD) with EEPROM

•

Gold edge contacts

•

Dual rank

Figure 1: 200-Pin SODIMM (MO-224 R/C A)

Module height: 30mm (1.18in)

Options

•

Operating temperature

–

Commercial (0°C

≤

+70°C)

–

Industrial (–40°C

≤

+85°C)

•

Package

–

200-pin DIMM (lead-free)

•

Frequency/CL2

–

2.5ns @ CL = 5 (DDR2-800)

–

2.5ns @ CL = 6 (DDR2-800)

–

3.0ns @ CL = 5 (DDR2-667)

–

3.75ns @ CL = 4 (DDR2-553)

–

5.0ns @ CL = 3 (DDR2-400)

Notes:

Marking

-80E

-800

-667

-53E

-40E

1. Contact Micron for industrial temperature

module offerings.

2. CL = CAS (READ) latency.

3. Not recommended for new designs.

Table 1: Key Timing Parameters

Speed

Grade

-80E

-800

-667

-53E

-40E

Industry

Nomenclature

PC2-6400

PC2-5300

PC2-4200

PC2-3200

Data Rate (MT/s)

CL = 6

800

–

CL = 5

800

667

–

CL = 4

533

553

400

CL = 3

400

RCD

(ns)

12.5

(ns)

12.5

(ns)

PDF: 09005aef80ebed66

htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN

Products and specifications discussed herein are subject to change by Micron without notice.

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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