= 2.7 V to 5.5 V, unless otherwise noted. All specifications apply for –40°C to +150°C, unless otherwise stated
Table 1. A Grade Specifications
Parameter
TEMPERATURE SENSOR AND ADC
Accuracy
Min
Typ
TBD
TBD
TBD
TBD
0.03125
1
2
2
2.7
1.6
190
1.6
280
0.2
0.2
631
1.41
4.88
7.4
42.9
65
423
641
2.5
0.8
±1
10
V
DD
− 0.3 V
0.4
50
V
pF
Max
±1
±2
±3
±4
1
Unit
°C
°C
°C
°C
°C
sec
ms
sec
V
mA
µA
mA
µA
µA
µA
µW
mW
µW
µW
µW
µW
µW
µW
V
V
µA
pF
Test Conditions/Comments
V
DD
= +3.3 V (±10%) and 5 V (±10%)
T
A
= 0°C to 70°C.
T
A
= −20°C to +85°C.
T
A
= −40°C to +125°C.
T
A
= −40°C to +150°C.
Temperature measurement every 1 second
Temperature Resolution
Auto Conversion Update Rate, t
R
Temperature Conversion Time
Thermal Time Constant
2
SUPPLIES
Supply Voltage
Supply Current
Normal Mode
5.5
2.2
300
2.2
400
1
1
For Specified Performance
V
DD
= 3.3 V. Powered up and converting
V
DD
= 3.3 V. Powered up and not converting
V
DD
= 5 V. Powered up and converting
V
DD
= 5 V. Powered up and not converting
V
DD
= 3.3 V.
V
DD
= 5 V.
V
DD
= 3.3 V. Auto conversion update, t
R
.
V
DD
= +5 V. Auto conversion update, t
R
.
V
DD
= 3.3 V
V
DD
= 5 V
V
DD
= 3.3 V
V
DD
= 5 V
V
DD
= 3.3 V
V
DD
= 5 V
Shutdown Mode
Power Dissipation
Normal Mode (Average)
Shutdown Mode (Average)
3
1 sps
10 sps
100 sps
DIGITAL INPUT
4
Input High Voltage, V
IH
Input Low Voltage, V
IL
Input Current, I
IN
Input Capacitance, C
IN
DIGITAL OUTPUT
5
Output High Voltage, V
OH
Output Low Voltage, V
OL
Output Capacitance, C
OUT
V
IN
= 0 V to V
DD
All digital inputs
I
SOURCE
= I
SINK
= 200 µA
I
OL
= 200 µA
It is not recommended to operate the device at temperatures above +125°C for greater than a total of 5% (5,000 hours) of the lifetime of the device. Any exposure
beyond this limit will affect device reliability.
2
Thermal Time Constant is the time it takes for a starting temperature difference to change to 36.8% of it’s starting value. For example if the ADT7301 experienced a
thermal shock from 0°C to 100°C, it would take typically 2 secs for the ADT7301 to reach 63.2°C.
3
The ADT7301 is taken out of shutdown mode and a temperature conversion is immediately performed after this write operation. Once the temperature conversion is
complete the ADT7301 is put back into shutdown mode.
4
Guaranteed by design and characterization, not production tested.
5
Guaranteed by design and characterization, not production tested.
Specifications subject to change without notice
1
Rev. PrJ | Page 3 of 14
ADT7301
TIMING CHARACTERISTICS
Preliminary Technical Data
Guaranteed by design and characterization, not production tested. All input signals are specified with tr = tf = 5 ns (10% to 90% of V
DD
)
and timed from a voltage level of 1.6 V.
T
A
= T
MIN
to T
MAX
, V
DD
= 2.7 V to 5.5 V, unless otherwise noted.
Table 2.
Parameter
1
t
1
t
2
t
3
t
4 2
t
5
t
6
t
7
t
82
Limit
5
25
25
35
20
5
5
40
Unit
ns min
ns min
ns min
ns max
ns min
ns min
ns min
ns max
Comments
CS to SCLK Setup Time
SCLK High Pulse Width
SCLK Low Pulse Width
Data Access Time after SCLK Falling Edge
Data Setup Time prior to SCLK Rising Edge
Data Hold Time after SCLK Rising Edge
CS to SCLK Hold Time
CS to DOUT High Impedance
1
2
See Figure 13. for SPI Timing diagram.
Measured with the load circuit of Figure 2
200µA
I
OL
TO
OUTPUT
PIN
1.6V
C
L
50pF
02884-0-002
200µA
I
OH
Figure 2. Load Circuit for Data Access Time and Bus Relinquish Time
Rev. PrJ | Page 4 of 14
Preliminary Technical Data
ABSOLUTE MAXIMUM RATINGS
Table 3. ADT7301 Stress Ratings
Parameter
V
DD
to GND
Digital Input Voltage to GND
Digital Output Voltage to GND
Operating Temperature Range
1
Storage Temperature Range
Junction Temperature
6-Lead SOT-23 (RJ-6)
Power Dissipation
2
Thermal Impedance
θ
JA
, Junction-to-Ambient (still air)
8-Lead MSOP (RM-8)
Power Dissipation
2
Thermal Impedance
4
θ
JA
, Junction-to-Ambient (still air)
θ
JC
, Junction-to-Case
IR Reflow Soldering
Peak Temperature
Time at Peak Temperature
Ramp-up Rate
Ramp-down Rate
Rating
−0.3 V to +7 V
−0.3 V to V
DD
+ 0.3 V
−0.3 V to V
DD
+ 0.3 V
−40°C to +150°C
−65°C to +150°C
+150°C
W
MAX
= (T
JMAX
- T
A3
)/θ
JA
MAXIMUM POWER DISSIPATION (W)
ADT7301
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability
1.2
190.4°C/W
W
MAX
= (T
JMAX
- T
A3)
/θ
JA
205.9°C/W
43.74°C/W
+220°C (−0/+5°C)
10 s to 20 s
2°C/s to 3°C/s
−6°C/sec
1.0
0.8
SOT-23
0.6
0.4
MSOP
0.2
TEMPERATURE (°C)
1
It is not recommended to operate the ADT7301 at temperatures above 125°C
for greater than a total of 5% of the lifetime of the device. Any exposure
beyond this limit will affect device reliability.
2
Values relate to package being used on a standard 2-layer PCB. Reference
Figure 3 for a plot of maximum power dissipation versus ambient
temperature (T
A
).
3
T
A
= ambient temperature
4
Junction-to-case resistance is applicable to components featuring a
preferential flow direction, e.g., components mounted on a heat sink.
Junction-to-ambient resistance is more useful for air-cooled, PCB mounted
components.
Figure 3. Plot of Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
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