Photo Transistor, 780nm, 0.05A I(C),
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Vishay Telefunken (Vishay) |
| Reach Compliance Code | unknown |
| Maximum dark power | 100 nA |
| JESD-609 code | e0 |
| Installation features | THROUGH HOLE MOUNT |
| Maximum on-state current | 0.05 A |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -55 °C |
| peak wavelength | 780 nm |
| Maximum power dissipation | 0.375 W |
| Maximum response time | 0.0000016 s |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |





| BPW14C | BPW14A | BPW14B | |
|---|---|---|---|
| Description | Photo Transistor, 780nm, 0.05A I(C), | Photo Transistor, 780nm, 0.05A I(C), | Photo Transistor, 780nm, 0.05A I(C), |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Maker | Vishay Telefunken (Vishay) | Vishay Telefunken (Vishay) | Vishay Telefunken (Vishay) |
| Reach Compliance Code | unknown | unknown | unknown |
| Maximum dark power | 100 nA | 100 nA | 100 nA |
| JESD-609 code | e0 | e0 | e0 |
| Installation features | THROUGH HOLE MOUNT | THROUGH HOLE MOUNT | THROUGH HOLE MOUNT |
| Maximum on-state current | 0.05 A | 0.05 A | 0.05 A |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C |
| peak wavelength | 780 nm | 780 nm | 780 nm |
| Maximum power dissipation | 0.375 W | 0.375 W | 0.375 W |
| Maximum response time | 0.0000016 s | 0.0000016 s | 0.0000016 s |
| surface mount | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |