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BZX85B4V7-TR

Description
Zener Diode, 4.7V V(Z), 2%, 1.3W,
CategoryDiscrete semiconductor    diode   
File Size45KB,5 Pages
ManufacturerVishay Telefunken (Vishay)
Websitehttp://www.vishay.com
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BZX85B4V7-TR Overview

Zener Diode, 4.7V V(Z), 2%, 1.3W,

BZX85B4V7-TR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay Telefunken (Vishay)
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance13 Ω
JESD-609 codee0
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation1.3 W
Nominal reference voltage4.7 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Maximum voltage tolerance2%
Working test current45 mA
BZX85B...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
Sharp edge in reverse characteristics
Low reverse current
Low noise
Very high stability
Applications
94 9369
Voltage stabilization
Order Instruction
Type
BZX85B2V7
Ordering Code
BZX85B2V7–TAP
Remarks
Ammopack
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
l=4 mm, T
L
=25
°
C
Type
Symbol
P
V
T
j
T
stg
Value
1.3
175
–65...+175
Unit
W
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=4 mm, T
L
=constant
Symbol
R
thJA
Value
110
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1
Unit
V
Document Number 85607
Rev. A4, 12-Mar-01
www.vishay.com
1 (5)
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