EEWORLDEEWORLDEEWORLD

Part Number

Search

MJE13003L-C-TMS-T

Description
Power Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size422KB,9 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet View All

MJE13003L-C-TMS-T Overview

Power Bipolar Transistor

UNISONIC TECHNOLOGIES CO., LTD
MJE13003
NPN SILICON POWER
TRANSISTOR
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V applications in switch
mode.
NPN SILICON TRANSISTOR
FEATURES
* Reverse biased SOA with inductive load @ T
C
=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical t
C
= 290ns @ 1A, 100°C.
* 700V blocking capability
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 9
QW-R204-004.S
I would like to ask you a question about the timing diagram (add and share a document)
I recently used an MSP430 microcontroller to drive a MAX3420E USB chip. I always cannot communicate using the SPI method. I suspect that I have read the timing diagram wrongly. I would like to ask eve...
boming Microcontroller MCU
Error Call Analysis---Verilog Case
Error (10207): Verilog HDL error at liftime.v(132): can't resolve reference to object "interrput" Why? This is a call statement always @ ( posedge clk)if(oflag) led_ro = interrput(ios,iom,ioh,sos,som,...
eeleader FPGA/CPLD
MSP430FR57xx Family User's Guide
...
莫妮卡 Microcontroller MCU
How to transfer uart data at 12MBaud to computer?
Hi everyone, I have a uart device that needs to work at a baud rate of 12MBaud. How can I transfer the speed to the computer?...
firstshine Embedded System
DC-DC 5V to 5V, the output cannot reach 5V, please help me, thank you, urgent!!!
DC-DC 5V to 5V, the output cannot reach 5V, please help me, thank you, urgent!!! The schematic diagram is in the attachment...
crazydream Power technology
Why is the GaN device [G-level is negative voltage powered]
[i=s]This post was last edited by btty038 on 2019-10-30 15:44[/i]We all know that before GaN, we rarely used negative voltage in RF amplification or [base station amplification], but after GaN came, e...
btty038 RF/Wirelessly

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1196  1015  816  1557  2339  25  21  17  32  48 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号