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Datasheet> All Categories > Discrete semiconductor> diode> MR856
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MR856

Description
3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size73KB，2 Pages
ManufacturerDigitron
Websitehttp://www.digitroncorp.com
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MR856 Overview

3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD

MR856 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDigitron
package instructionDO-201A, 2 PIN
Reach Compliance Codeunknow
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JEDEC-95 codeDO-201
JESD-30 codeO-XALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage600 V
Maximum reverse current10 µA
Maximum reverse recovery time0.3 µs
surface mountNO
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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DIGITRON SEMICONDUCTORS
MR850-MR856
3A SCHOTTKY RECTIFIER
MAXIMUM RATINGS
Rating
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Non-repetitive peak reverse voltage
RMS reverse voltage
Average rectified forward current
(single phase resistive load)
Non-repetitive peak surge current
(surge applied at rated load conditions)
Operating junction temperature range
Storage junction temperature range
Maximum thermal resistance
Junction to ambient
Symbol
V
RRM
V
RWM
V
R
V
RSM
V
R(RMS)
I
O
I
FSM
T
J
T
stg
R
ӨJA
MR850
50
75
35
MR851
100
150
70
MR852
200
250
140
3.0 @ T
A
= 80°C
MR854
400
450
280
MR856
600
650
420
Unit
V
V
V
A
A
°C
°C
°C/W
100
-65 to +125
-65 to +150
28
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
Forward voltage
(I
F
= 3.0A, T
J
= 25°C)
Reverse current
(rated dc voltage) T
J
= 25°C
Reverse current
(rated dc voltage) T
J
= 80°C
MR850
MR851
MR852
MR854
MR856
Reverse recovery time
(I
F
= 1.0A to V
R
= 30Vdc)
(I
F
= 15A, di/dt = 10A/µs)
Reverse recovery current
(I
F
= 1.0A to V
R
= 30Vdc)
Note 1: Pulse test: Pulse width = 300µs, duty cycle = 2.0%.
Symbol
V
F
I
R
Min
-
-
-
-
-
-
-
-
-
-
Typ
1.04
2.0
-
60
-
-
100
100
150
-
Max
1.25
10
150
150
200
250
300
200
300
2.0
Unit
V
µA
I
R
µA
t
rr
ns
I
RM(REC)
A
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121128

MR856 Related Products

MR856 MR850 MR851 MR852 MR854
Description 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Maker Digitron Digitron Digitron Digitron Digitron
package instruction DO-201A, 2 PIN DO-201A, 2 PIN O-XALF-W2 DO-201A, 2 PIN DO-201A, 2 PIN
Reach Compliance Code unknow unknow unknow unknow unknow
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.25 V 1.25 V 1.25 V 1.25 V 1.25 V
JEDEC-95 code DO-201 DO-201 DO-201 DO-201 DO-201
JESD-30 code O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2
JESD-609 code e0 e0 e0 e0 e0
Maximum non-repetitive peak forward current 100 A 100 A 100 A 100 A 100 A
Number of components 1 1 1 1 1
Phase 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 600 V 50 V 100 V 200 V 400 V
Maximum reverse current 10 µA 10 µA 10 µA 10 µA 10 µA
Maximum reverse recovery time 0.3 µs 0.3 µs 0.3 µs 0.3 µs 0.3 µs
surface mount NO NO NO NO NO
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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