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MURH810CT

Description
8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB
CategoryDiscrete semiconductor    diode   
File Size281KB,2 Pages
ManufacturerDigitron
Websitehttp://www.digitroncorp.com
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MURH810CT Overview

8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB

MURH810CT Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDigitron
Reach Compliance Codeunknow
applicationULTRA FAST RECOVERY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.2 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Maximum non-repetitive peak forward current65 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current4 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage100 V
Maximum reverse current10 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
DIGITRON SEMICONDUCTORS
MURH805CT-MURH860CT
MAXIMUM RATINGS
Rating
Peak repetitive reverse voltage
Maximum RMS voltage
DC blocking voltage
Average forward current
(Rated V
R
)
Peak forward surge current
(8.3ms, half sine)
Operating and storage junction temperature range
Symbol
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
T
J,
T
stg
MURH
805CT
50
35
50
810CT
100
70
100
820CT
200
140
200
8 @ T
C
= 120°C
65
-55 to +150
840CT
400
280
400
860CT
600
420
600
Unit
8A ULTRA FAST RECOVERY RECTIFIER
V
A
A
°C
ELECTRICAL CHARACTERISTICS
(@ 25°C unless otherwise noted)
Parameter
Maximum instantaneous forward voltage
(1)
(I
F
= 4A, T
J
= 25°C)
Maximum DC reverse current
(Rated dc voltage, T
J
= 25°C)
(Rated dc voltage, T
J
= 100°C)
(1)
Symbol
V
F
MURH
805CT
810CT
820CT
2.2
10
800
35
50
840CT
860CT
2.8
Unit
V
I
R
µA
Maximum reverse recovery time
(I
F
= 1A, di/dt = 50A/µs)
Note 1: Pulse test: Pulse width = 300µs, duty cycle = 2.0%.
t
rr
ns
MECHANICAL CHARACTERISTICS
Case
Marking
Pin out
TO-220AB
Alpha-numeric
See below
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121130

MURH810CT Related Products

MURH810CT MURH805CT
Description 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB
Is it Rohs certified? incompatible incompatible
Maker Digitron Digitron
Reach Compliance Code unknow unknow
application ULTRA FAST RECOVERY ULTRA FAST RECOVERY
Shell connection CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 2.2 V 2.2 V
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0
Maximum non-repetitive peak forward current 65 A 65 A
Number of components 2 2
Phase 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 4 A 4 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 100 V 50 V
Maximum reverse current 10 µA 10 µA
Maximum reverse recovery time 0.035 µs 0.035 µs
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
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