DIGITRON SEMICONDUCTORS
S2800 SERIES
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive forward and reverse blocking voltage
(1)
(T
J
= 25 to 100°C, gate open)
S2800F
S2800A
S2800B
S2800D
S2800M
S2800N
Peak non-repetitive reverse voltage and non-repetitive off-state voltage
(1)
(T
J
= 25 to 100°C, gate open)
S2800F
S2800A
S2800B
S2800D
S2800M
S2800N
Forward on-state current RMS
(all conduction angles), T
C
= 75°C
Peak forward surge current
(one cycle, sine wave, 60Hz, T
C
= 80°C)
Circuit fusing considerations
(t = 8.3ms)
Forward peak gate power
(t
≤
10µs)
Forward average gate power
Operating junction temperature range
Storage temperature range
Symbol
Value
Unit
V
RRM
, V
DRM
50
100
200
400
600
800
Volts
V
RSM
, V
DSM
75
125
250
500
700
900
10
100
40
16
0.5
-40 to +100
-40 to +150
Volts
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
T
J
T
stg
Amps
Amps
A
2
s
Watts
Watts
°C
°C
Note 1: V
DRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
R
ӨJC
Maximum
2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Peak forward or reverse blocking current
(V
AK
= V
DRM
or V
RRM
, gate open)
T
C
= 25°C
T
C
= 100°C
Instantaneous on-state voltage
(I
TM
= 30A peak, pulse width
≤
1ms, duty cycle
≤
2%)
Gate trigger current (continuous dc)
(V
D
= 12V, R
L
= 30Ω)
Gate trigger voltage (continuous dc)
(V
D
= 12V, R
L
= 30Ω)
Holding current
(V
D
= 12V, gate open, I
T
= 150mA)
Gate controlled turn-on time
(V
D
= rated V
DRM
, I
TM
= 2A, I
GR
= 80mA)
144 Market Street
Kenilworth NJ 07033 USA
Symbol
Min.
Typ.
Max.
Unit
I
DRM
-
-
-
-
-
-
-
-
-
1.7
8
0.9
10
1.6
10
2
2
15
1.5
20
-
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130128
µA
mA
Volts
mA
Volts
mA
µs
V
T
I
GT
V
GT
I
H
t
gt
phone +1.908.245-7200
fax +1.908.245-0555
DIGITRON SEMICONDUCTORS
S2800 SERIES
Characteristic
Circuit commutated turn-off time
(V
D
= V
DRM
, I
TM
= 2A, pulse width
≤
50µs, dv/dt = 200V/µs,
di/dt = 10A/µs, T
C
= 75°C )
Critical rate of rise of off-state voltage
(V
D
= Rated V
DRM
, exponential rise, T
C
= 100°C)
SILICON CONTROLLED RECTIFIER
Symbol
t
q
-
dv/dt
-
25
100
-
-
V/µs
Min.
Typ.
Max.
Unit
µs
MECHANICAL CHARACTERISTICS
Case
Marking
Pin out
TO-220AB
Body painted, alpha-numeric
See below
TO-220AB
Inches
Min
Max
0.575 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.155
0.014 0.022
0.500 0.562
0.045 0.055
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
-
0.050
0.045
-
-
0.080
Millimeters
Min
Max
14.600 15.750
9.650 10.290
4.060
4.820
0.640
0.890
3.610
3.730
2.410
2.670
2.790
3.930
0.360
0.560
12.700 14.270
1.140
1.390
4.830
5.330
2.540
3.040
2.040
2.790
1.140
1.390
5.970
6.480
-
1.270
1.140
-
-
2.030
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130128
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