DMT4005SCT
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
40V
R
DS(ON)
max
4.7mΩ @ V
GS
= 10V
I
D
T
C
= +25°
C
100A
Features
100% Unclamped Inductive Switching – ensures more reliable
and robust end application
Low Input Capacitance
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Engine Management Systems
Body Control Electronics
DC-DC Converters
Mechanical Data
Case: TO220-3
Case Material: Molded Plastic, ―Green‖ Molding Compound, UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
TO220-3
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information
(Note 4)
Part Number
DMT4005SCT
Notes:
Case
TO220-3
Packaging
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
T4005S
YYWW
= Manufacturer’s Marking
T4005S = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
DMT4005SCT
Document number: DS38889 Rev. 1 - 2
1 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DMT4005SCT
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
T
C
= +25°
C
T
C
= +70°
C
T
C
= +25°
C
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
I
AS
E
AS
Value
40
±20
100
85
85
160
32.5
52.8
Units
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°
C
T
C
= +25°
C
Symbol
P
D
R
JA
P
D
R
JC
T
J,
T
STG
Value
Units
W
°
C/W
W
°
C/W
°
C
-55 to +150
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
40
—
—
2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
3.8
—
3062
902
179
0.67
49.1
10.3
13
8.7
6.8
18.6
7.3
31.8
26.5
Max
—
1
±100
4
4.7
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 1mA
V
DS
= 32V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 50A
V
GS
= 0V, I
S
= 50A
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DD
= 20V, I
D
= 50A,
pF
nC
ns
V
DD
= 20V, V
GS
= 10V,
I
D
= 50A, R
G
= 3Ω
I
F
= 50A, di/dt = 100A/μs
ns
nC
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on infinite heat sink.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMT4005SCT
Document number: DS38889 Rev. 1 - 2
2 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DMT4005SCT
30.0
V
GS
= 4.0V
25.0
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
V
GS
= 5.0V
20.0
V
GS
= 6.0V
15.0
V
GS
= 10V
V
GS
= 3.5V
I
D
, DRAIN CURRENT (A)
25
30
V
DS
= 5V
20
15
T
J
= 150
o
C
T
J
= 125
o
C
5
T
J
= 85
o
C
0
T
J
= 25
o
C
T
J
= -55
o
C
10.0
10
5.0
V
GS
= 3.0V
0.0
0
0.5
1
1.5
2
2.5
3
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.006
0.005
0.004
0.003
0.002
0.001
0
0
20
40
60
80
100
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current and
Gate Voltage
V
GS
= 10V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
0.007
0.02
0.015
0.01
I
D
= 50A
0.005
0
0
4
8
12
16
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
0.007
V
GS
= 10V
0.006
T
J
= 150
o
C
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
1.8
1.6
0.005
T
J
= 125
o
C
T
J
= 85
o
C
T
J
= 25
o
C
1.4
V
GS
= 10V, I
D
= 50A
0.004
1.2
0.003
T
J
= -55
o
C
1
V
GS
= 10V, I
D
= 20A
0.8
0.002
0.001
0
20
40
60
I
D
, DRAIN CURRENT (A)
80
100
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
3 of 6
www.diodes.com
June 2016
© Diodes Incorporated
Figure 5. Typical On-Resistance vs Drain Current and
Temperature
DMT4005SCT
Document number: DS38889 Rev. 1 - 2
DMT4005SCT
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
0.007
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
100
V
GS
= 0V
I
S
, SOURCE CURRENT (A)
80
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
C
oss
10000
f = 1MHz
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs
Temperature
I
D
= 250µA
I
D
= 1mA
0.006
V
GS
= 10V, I
D
= 50A
0.005
0.004
V
GS
= 10V, I
D
= 20A
0.003
0.002
1000
60
40
T
A
= 150
o
C
T
A
= 25
o
C
T
A
= 85
o
C
T
A
= 25
o
C
T
A
= -55
o
C
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
100
C
rss
20
0
10
0
5
10
15
20
25
30
35
40
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
1000
R
DS(ON)
Limited
P
W
= 10µs
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
I
D
, DRAIN CURRENT (A)
100
6
V
GS
(V)
10
P
W
=1s
P
W
= 100ms
P
W
= 10ms
4
1
V
DS
= 20V, I
D
= 50A
P
W
= 1ms
T
J(Max)
= 150℃
T
C
= 25℃
Single Pulse
DUT on 1*MRP Board
V
GS
= 10V
0.1
P
W
= 100µs
2
0.1
0
0
10
20
Q
g
(nC)
Figure 11. Gate Charge
30
40
50
0.01
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
DMT4005SCT
Document number: DS38889 Rev. 1 - 2
4 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DMT4005SCT
1
D=0.9
D=0.5
r(t), TRANSIENT THERMAL RESISTANCE
D=0.3
0.1
D=0.1
D=0.05
D=0.7
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
R
θJC
(t) = r(t) * R
θJC
R
θJC
= 1.1℃/W
Duty Cycle, D = t1 / t2
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO220-3
TO220-3
Dim
Min
Max
A
3.55
4.85
b
0.51
1.14
b1
1.14
1.78
C
0.31
1.14
D
14.20 16.50
D1
5.84
6.86
E
9.70
10.70
e
2.79
2.99
e1
4.83
5.33
F
0.51
1.40
J1
2.03
2.92
L
12.72 14.72
L1
3.66
6.35
P
3.53
4.09
Q
2.54
3.43
All Dimensions in mm
DMT4005SCT
Document number: DS38889 Rev. 1 - 2
5 of 6
www.diodes.com
June 2016
© Diodes Incorporated
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