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1N4446.TR

Description
100V, SILICON, SIGNAL DIODE, DO-35
CategoryDiscrete semiconductor    diode   
File Size50KB,2 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
Stay tuned Parametric

1N4446.TR Overview

100V, SILICON, SIGNAL DIODE, DO-35

1N4446.TR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current2 A
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.004 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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