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Datasheet> All Categories > Discrete semiconductor> The transistor> DMA5640M
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DMA5640M

Description
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size425KB，3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance  
Download Datasheet Parametric View All

DMA5640M Overview

Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, 6 PIN

DMA5640M Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-F6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON

DMA5640M Preview

This product complies with the RoHS Directive (EU 2002/95/EC).
DMA5640M
Silicon PNP epitaxial planar type
For digital circuits
Features
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
SMini6-F3-B
Package dimension clicks here.→
Click!
Basic Part Number
Dual DRA2123J (Individual)
Packaging
DMA5640M0R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Name
Pin
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
Marking Symbol: S3
Internal Connection
(C1)
6
Tr1
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
–50
–50
–100
150
150
–55 to +150
Unit
V
V
mA
mW
°C
°C
(B2)
5
R
1
R
2
R
2
(E2)
4
R
1
Tr2
1
(E1)
2
(B1)
3
(C2)
Resistance value
R
1
R
2
2.2
47
kΩ
kΩ
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I(on)
V
I(off)
R
1
R
1
/ R
2
Conditions
I
C
= –10 µA, I
E
= 0
I
C
= –2 mA, I
B
= 0
V
CB
= –50 V, I
E
= 0
V
CE
= –50 V, I
B
= 0
V
EB
= –6 V, I
C
= 0
V
CE
= –10 V, I
C
= –5 mA
I
C
= –10 mA, I
B
= – 0.5 mA
V
CE
= – 0.2 V, I
C
= –5 mA
V
CE
= –5 V, I
C
= –100 µA
–30%
0.037
2.2
0.047
–1.2
– 0.4
+30%
0.057
80
– 0.25
Min
–50
–50
– 0.1
– 0.5
– 0.2
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
kΩ
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2012
Ver. CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DMA5640M
DMA5640M_PT-Ta
DMA5640M_IC-VCE
DMA5640M_hFE-IC
P
T
T
a
200
−120
T
a
=
25°C
−100
I
C
V
CE
300
I
B
= −700 µA
−600 µA
−500 µA
−80
−60
−40
−20
−400 µA
−300 µA
−200 µA
−100 µA
h
FE
I
C
V
CE
= −10
V
T
a
=
85°C
25°C
−30°C
150
100
50
0
−
0.1
Total power dissipation P
T
(mW)
Collector current I
C
(mA)
150
Forward current transfer ratio h
FE
250
200
100
50
0
0
40
80
120
160
200
0
Ambient temperature T
a
(
°C
)
DMA5640M_VCEsat-IC
0
−2
−4
−6
−8
−10
−12
−1
−10
−100
Collector-emitter voltage V
CE
(V)
DMA5640M_I
O
-V
IN
Collector current I
C
(mA)
DMA5640M_VIN-IO
V
CE(sat)
I
C
I
O
V
IN
−10
V
O
= −5
V
T
a
=
85°C
25°C
−30°C
−100
V
O
= −
0.2 V
V
IN
I
O
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
I
C
/ I
B
= 20
Output current I
O
(mA)
Input voltage V
IN
(V)
−1
−1
−10
T
a
=
85°C
25°C
−10
−1
−
0.1
−1
25°C
T
a
= −30°C
85°C
−30°C
−10
−2
−
0.01
−
0.1
−1
−10
−100
−10
−3
0
−
0.4
−
0.8
−1.2
−
0.1
−
0.1
−1
−10
−100
Collector current I
C
(mA)
Input voltage V
IN
(V)
Output current I
O
(mA)
2
Ver. CED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20100202
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