PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 30N50P
IXFT 30N50P
IXFV 30N50P
IXFV 30N50PS
V
DSS
I
D25
R
DS(on)
t
rr
= 500 V
= 30 A
≤
200 mΩ
Ω
≤
200 ns
TO-247 AD (IXFH)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150° C, R
G
= 5
Ω
T
C
= 25° C
Maximum Ratings
500
500
±30
±40
30
75
30
40
1.2
10
460
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°C
G
D
S
D (TAB)
D (TAB)
TO-268 (IXFT)
G
S
D (TAB)
PLUS220 (IXFV)
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247, TO-3P)
Mounting force (PLUS220, PLUS220SMD)
PLUS220, PLUS220SMD
TO-268
TO-247
300
260
PLUS220 SMD(IXFV..S)
1.13/10 Nm/lb.in
11 65/2.5 15 N/lb.
4
5
6
g
g
g
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Symbol
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
Test Conditions
(T
J
= 25° C, unless otherwise specified)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125° C
Characteristic Values
Min. Typ. Max.
500
3.0
5.0
±100
25
750
165
200
V
V
nA
µA
µA
m
Ω
Features
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2006 IXYS All rights reserved
DS99414E(04/06)
IXFH 30N50P IXFT 30N50P
IXFV 30N50P IXFV 30N50PS
Symbol
Test Conditions
Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min.
Typ.
Max.
17
27
4150
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
445
28
25
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 5
Ω
(External)
24
82
24
70
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
27
22
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.27° C/W
(TO-247, PLUS220)
0.21
°
C/W
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
Test Conditions
V
GS
= 0 V
Repetitive
Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min.
Typ.
Max.
30
90
1.5
A
A
V
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= 25 A; -di/dt = 100 A/µs
V
R
= 100 V; V
GS
= 0 V
6
0.6
200 ns
A
µC
Characteristic Curves
Fig. 1. Output Characteristics
@ 25
º
C
30
27
24
21
V
GS
= 10V
8V
7V
60
50
70
V
GS
= 10V
8V
Fig. 2. Extended Output Characteristics
@ 25
º
C
I
D
- Amperes
I
D
- Amperes
18
15
12
9
6
3
0
0
1
2
3
4
5
6
7
6V
40
30
20
10
0
0
3
6
9
12
15
7V
6V
18
21
24
27
30
V
D S
- Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
V
D S
- Volts
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFH 30N50P IXFT 30N50P
IXFV 30N50P IXFV 30N50PS
Fig. 3. Output Characteristics
@ 125
º
C
30
27
24
V
GS
= 10V
8V
7V
3.4
3.1
V
GS
= 10V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
I
D
- Amperes
21
18
15
12
9
6
3
0
0
2
4
6
8
10
12
14
5V
6V
R
D S ( o n )
- Normalized
2.8
2.5
2.2
1.9
1.6
1.3
1
0.7
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 15A
I
D
= 30A
V
D S
- Volts
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
3.4
3.1
V
GS
= 10V
T
J
= 125
º
C
35
30
25
T
J
- Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
R
D S ( o n )
- Normalized
2.8
I
D
- Amperes
T
J
= 25
º
C
0
10
20
30
40
50
60
70
80
2.5
2.2
1.9
1.6
1.3
1
0.7
20
15
10
5
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
Fig. 7. Input Adm ittance
55
50
45
40
60
55
50
45
40
35
30
25
20
15
10
5
0
3.5
4
4.5
5
5.5
6
6.5
7
7.5
0
5
10
T
C
- Degrees Centigrade
Fig. 8. Transconductance
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
125
º
C
I
D
- Amperes
35
30
25
20
15
10
5
0
T
J
= 125
º
C
25
º
C
-40
º
C
15
20
25
30
35
40
45
50
55
V
G S
- Volts
I
D
- Amperes
© 2006 IXYS All rights reserved
IXFH 30N50P IXFT 30N50P
IXFV 30N50P IXFV 30N50PS
Fig. 9. Source Current vs.
Source-To-Drain Voltage
90
80
70
10
9
8
7
V
DS
= 250V
I
D
= 15A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
60
V
G S
- Volts
T
J
= 25
º
C
0.8
0.9
1
1.1
50
40
30
20
10
0
0.4
0.5
0.6
0.7
T
J
= 125
º
C
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
V
S D
- Volts
Fig. 11. Capacitance
10000
100
Q
G
- nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
R
DS(on)
Limit
Capacitance - picoFarads
C iss
I
D
- Amperes
1000
25µs
100µs
1ms
10ms
C oss
100
C rs
f = 1MHz
10
0
5
10
15
20
25
30
35
40
10
T
J
= 150ºC
T
C
= 25ºC
1
10
DC
100
1000
V
D S
- Volts
Fig. 13. M axim um Tr ans ie nt The r m al Re s is tance
1.00
V
D S
- Volts
R
( t h ) J C
-
º
C / W
0.10
0.01
0.1
1
10
100
1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 30N50P IXFT 30N50P
IXFV 30N50P IXFV 30N50PS
Package Outline Drawings
TO-247 (IXFH) Outline
TO-268 (IXFT) Outline
PLUS220 (IXFV) Outline
1
2
3
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A
1
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220SMD (IXFV_S) Outline
© 2006 IXYS All rights reserved
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