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1N6378-E3

Description
DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor
CategoryDiscrete semiconductor    diode   
File Size94KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

1N6378-E3 Overview

DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor

1N6378-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionO-PALF-W2
Contacts2
Manufacturer packaging codeCASE 1.5KE
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY
Minimum breakdown voltage21.2 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT APPLICABLE
polarityUNIDIRECTIONAL
Maximum power dissipation6.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage18 V
surface mountNO
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT APPLICABLE
Base Number Matches1
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
Case Style 1.5KE
• Low incremental surge resistance
• Solder dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
V
WM
P
PPM
P
D
I
FSM
T
J
max.
5.0 V to 18 V
1500 W
6.5 W
200 A
175 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of sensor
units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE-18C).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1)
(Fig. 1)
Peak pulse current with a 10/1000 µs waveform
(1)
(Fig. 3)
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 8)
Peak forward surge current 8.3 ms single half sine-wave uni-directional
only
(2)
Maximum instantaneous forward voltage at 100 A for uni-directional only
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
1500
See next table
6.5
200
3.5
- 55 to + 175
UNIT
W
A
W
A
V
°C
www.vishay.com
116
Document Number: 88356
Revision: 04-Sep-07
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