DIGITRON SEMICONDUCTORS
T2322, T2323 SERIES
SENSITIVE GATE TRIACS
SILICON BIDIRECTIONAL THYRISTORS
2.5 AMPERES RMS; 50 THROUGH 600 VOLTS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
(T
J
= 25°C unless otherwise noted)
Suffix
(Note 1)
Symbol
Value
50
100
200
300
400
500
600
2.5
25
2.6
10
0.15
0.5
-40 to +110
-40 to +150
8.0
Unit
Peak Repetitive Off-State Voltage
(T
J
= 25 to 100°C, Gate Open)
T2322, T2323
F
A
B
C
D
E
M
V
DRM
V
RMS On-State Current (T
C
= 70°C)
(Full Cycle Sine Wave 50 to 60 Hz)
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz)
Circuit Fusing (t
≤
8.3ms)
Peak-Gate Power (1µs)
Average Gate Power
(T
C
= 60°C)
Peak Gate Current (1µs)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque (6-32 Screw)
(Note 2)
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
-
A
A
A
2
s
W
W
A
°C
°C
In. lb.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Symbol
R
θJC
R
θJA
Max
3.5
60
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristics
Peak Blocking Current
(V
D
= Rated V
DRM,
Gate Open)
Peak On-State Voltage
(I
TM
= 10A)
(Note 3)
(T
C
= 25°C unless otherwise noted; Electrical characteristics apply in both directions)
Symbol
T
J
= 25°C
T
J
= 100°C
I
DRM
V
TM
Min
-
-
-
-
-
I
GT
T2323 Series
T2323 Series
V
GT
-
-
-
0.15
-
-
10
-
-
1
-
15
1.8
100
25
40
2.2
-
30
2.5
-
sales@digitroncorp.com
www.digitroncorp.com
Typ
-
0.2
1.7
1.7
-
Max
10
0.75
2.6
2.2
10
Unit
µA
mA
V
T2323 Series
T2322 Series
T2322 Series
Gate Trigger Current
(Continuous dc)
(V
D
= 12V, R
L
= 30Ω)
All Modes
MT2(+), G(+); MT2(-), G(-)
MT2(+), G(-); MT2(-), G (+)
Gate Trigger Voltage
(Continuous dc)
(V
D
= 12 Vdc, R
L
= 30Ω, T
C
= 25°C)
(V
D
= V
DRM
, R
L
= 125Ω, T
C
= 100°C)
Holding Current
(V
D
= 12V, I
TM
= 150mA, Gate Open)
Gate Controlled Turn-On Time
(V
D
= Rated V
DRM
, I
TM
= 10A pk, I
G
= 60mA)
mA
V
I
H
t
gt
dv/dt
mA
µs
V/µs
Critical Rate of Rise of Off-State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform, T
C
= 100°C)
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
Revised: 20130201
DIGITRON SEMICONDUCTORS
T2322, T2323 SERIES
SENSITIVE GATE TRIACS
Critical Rate of Rise of Commutation Voltage
(V
D
= Rated V
DRM
, I
TM
= 3.5 A pk, Commutating
di/dt = 1.26 A/ms, Gate Unenergized, T
C
= 90°C
SILICON BIDIRECTIONAL THYRISTORS
2.5 AMPERES RMS; 50 THROUGH 600 VOLTS
1.0
4.0
-
V/µs
dv/dt(c)
Note 1: V
DRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are
exceeded.
Note 2: Torque rating applies with use of torque washer. Mounting Torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and
heat-sink contact pad are common. For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds.
Note 3: Pulse Test: Pulse Width
≤
300ms, Duty Cycle
≤
2%.
MECHANICAL CHARACTERISTICS
Case
Marking
Pin out
TO-126
Alpha-numeric
See below
TO-126
Inches
Min
Max
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.125
0.091
0.097
0.050
0.095
0.015
0.025
0.595
0.655
3° TYP
0.148
0.158
0.045
0.055
0.025
0.035
0.145
0.155
0.040
-
Millimeters
Min
Max
10.80
11.050
7.490
7.750
2.410
2.670
0.510
0.660
2.920
3.180
2.310
2.460
1.270
2.410
0.380
0.640
15.110
16.640
3° TYP
3.760
4.010
1.140
1.400
0.640
0.890
3.680
3.940
1.020
-
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Revised: 20130201
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