DIGITRON SEMICONDUCTORS
T4120 SERIES
BIDIRECTIONAL TRIODE THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Repetitive peak off-stage voltage
(1)
(T
J
= -65 to +100°C, gate open)
T4120B
T4120D
T4120M
RMS on-state current
(conduction angle = 360°, T
C
≤
75°C)
Peak non-repetitive surge current
(One Cycle, 60Hz)
Circuit fusing considerations
(T
C
= -65 to +100°C, t = 1.25 to 10ms)
Peak gate power
(pulse width = 1.0µs)
Average gate power
Peak trigger current
(pulse width = 1.0µs)
Operating junction temperature range
Storage temperature range
Stud torque
Symbol
Value
Unit
V
DRM
200
400
600
15
100
50
16
0.5
4
-65 to +100
-65 to +150
30
Volts
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
Amps
Amps
A
2
s
Watts
Watts
Amps
°C
°C
In. lb.
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
THERMAL CHARACTERISTICS
Characteristics
Thermal resistance, junction to case
Symbol
R
Ө
JC
Max
1.1
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, either polarity of MT2 to MT1 voltage unless otherwise noted)
Characteristic
Peak off state current
(Rated V
DRM
@ T
C
= 100°C)
Peak on-state voltage
(I
TM
= 21A peak)
DC gate trigger current
(continuous dc)
(2)
(V
D
= 12V, R
L
= 30Ω)
MT2(+), G(+); MT2(-), G(-)
MT2(+), G(-); MT2(-), G(+)
MT2(+), G(+); MT2(-), G(-), T
C
= -65°C
MT2(+), G(-); MT2(-), G(+), T
C
= -65°C
DC gate trigger voltage
(continuous dc), all quadrants
(V
D
= 12V, R
L
= 30Ω)
(V
D
= 12V, R
L
= 30Ω, T
C
= -65°C)
(V
D
= Rated V
DRM
, R
L
= 125Ω, T
C
= 100°C)
Holding current
(V
D
= 12V, gate open, I
T
= 500mA, T
C
= 25°C)
(V
D
= 12V, gate open, I
T
= 500mA, T
C
= -65°C)
Gate controlled turn on time
(V
D
= Rated V
DRM
, I
T
= 25A, I
GT
= 160mA, rise time = 0.1µs)
Critical rate of rise of commutating voltage
(Rated V
DRM
, I
T(RMS)
= 15A, commutating di/dt = 8A/ms, gate unenergized, T
C
= 75°C)
Symbol
I
DRM
V
TM
Min
-
-
Typ
-
1.4
Max
2
1.8
Unit
mA
Volts
I
GT
-
-
-
-
-
-
0.2
-
-
-
2
-
-
-
-
-
-
-
-
-
1.6
10
50
80
150
200
2.5
4.0
-
75
300
2.5
-
mA
V
GT
Volts
I
H
mA
t
gt
dv/dt(c)
µs
V/µs
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130206
DIGITRON SEMICONDUCTORS
T4120 SERIES
Characteristic
Critical rate of rise of off-state voltage
(Rated V
DRM
, exponential voltage rise, gate open, T
C
= 100°C)
T4120B
T4120D
T4120M
BIDIRECTIONAL TRIODE THYRISTORS
Symbol
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, either polarity of MT2 to MT1 voltage unless otherwise noted)
dv/dt
30
20
10
150
100
75
-
-
-
V/µs
MECHANICAL CHARACTERISTICS
Case
Marking
Polarity
TO-48 ISO
Alpha-numeric
Cathode is stud
TO-48 ISO
Inches
Min
Max
0.551
0.559
0.501
0.505
-
1.280
-
0.160
-
0.265
0.420
0.455
0.300
0.350
0.255
0.275
0.055
0.085
0.135
0.150
Millimeters
Min
Max
14.000
14.200
12.730
12.830
-
32.510
-
4.060
-
6.730
10.670
11.560
7.620
8.890
6.480
6.990
1.400
2.160
3.430
3.810
A
B
C
F
H
J
K
L
Q
T
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130206
Microchip MCU
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