75 V, 40 A, 7.0 mΩ Low R
DS(ON)
N ch Trench Power MOSFET
GKI07113
Features
V
(BR)DSS
--------------------------------- 75 V (I
D
= 100
µA)
I
D
---------------------------------------------------------- 40 A
R
DS(ON)
---------- 9.5 mΩ max. (V
GS
= 10 V, I
D
= 27.2 A)
Q
g
------ 25.0nC (V
GS
= 4.5 V, V
DS
= 38 V, I
D
= 31.2 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Package
DFN 5 × 6 (L)
8pin
D
D
D
D
D
D
D
D
8pin
S
1pin
S
S G
G
S
S
S
1pin
Not to scale
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Equivalent circuit
D(5)(6)(7)(8)
G(4)
S(1)(2)(3)
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Single Pulse Avalanche Energy
Avalanche Current
Power Dissipation
Operating Junction Temperature
Unless otherwise specified, T
A
= 25 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
SM
E
AS
I
AS
P
D
T
J
T
C
= 25 °C,
with infinite heatsink
T
A
= 25 °C,
mounted on PCB*
PW ≤ 100µs
Duty cycle ≤ 1 %
V
DD
= 38V, L = 1 mH,
I
AS
= 11.2 A, unclamped,
R
G
= 4.7 Ω,
Refer to Figure 1
T
C
= 25 °C,
with infinite heatsink
T
A
= 25 °C,
mounted on PCB*
PW ≤ 100µs
Duty cycle ≤ 1 %
Test conditions
Rating
75
± 20
40
9
80
40
80
126
23.3
77
3.1
150
− 55 to 150
Unit
V
V
A
A
A
A
A
mJ
A
W
W
°C
°C
Storage Temperature Range
T
STG
* 1 inch square 2 oz copper pad on 1.5 × 1.5 inch PCB.
GKI07113-DS Rev.1.6
Mar. 30, 2015
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
1
GKI07113
Thermal Characteristics
Unless otherwise specified, T
A
= 25 °C
Parameter
Symbol
Test Conditions
Thermal Resistance
R
θJC
(
Junction to Case)
Thermal Resistance
Mounted on PCB*
R
θJA
(
Junction to Ambient)
* 1 inch square 2 oz copper pad on 1.5 × 1.5 inch PCB.
Min.
−
−
Typ.
−
−
Max.
1.6
40.3
Unit
°C/W
°C/W
Electrical Characteristics
Unless otherwise specified, T
A
= 25 °C
Parameter
Drain to Source Breakdown
Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate Threshold Voltage
Static Drain to Source
On-Resistance
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= 10 V)
Total Gate Charge (V
GS
= 4.5 V)
Gate to Source Charge
Gate to Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source to Drain Diode Forward
Voltage
Source to Drain Diode Reverse
Recovery Time
Source to Drain Diode Reverse
Recovery Charge
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
R
G
C
iss
C
oss
C
rss
Q
g1
Q
g2
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 38 V
I
D
= 31.2 A
V
GS
= 10 V, R
G
= 4.7 Ω
Refer to Figure 2
V
DS
= 38 V
I
D
= 31.2 A
Test Conditions
I
D
= 100 μA, V
GS
= 0 V
V
DS
= 75 V, V
GS
= 0 V
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 27.2 A, V
GS
= 10 V
I
D
= 13.6 A, V
GS
= 4.5 V
f = 1 MHz
V
DS
= 25 V
V
GS
= 0 V
f = 1 MHz
Min.
75
−
−
1.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
2.0
7.0
8.0
1.1
4040
370
215
54.0
25.0
9.8
7.3
6.8
6.4
29.4
13.3
0.9
44.3
69.1
Max.
−
100
± 100
2.5
9.5
10.9
−
−
−
−
−
−
−
−
−
−
−
−
1.5
−
−
Unit
V
µA
nA
V
mΩ
mΩ
Ω
pF
nC
ns
V
SD
t
rr
Q
rr
I
S
= 27.2 A, V
GS
= 0 V
I
F
= 31.2 A
di/dt = 100 A/µs
Refer to Figure 3
−
−
−
V
ns
nC
GKI07113-DS Rev.1.6
Mar. 30, 2015
SANKEN ELECTRIC CO.,LTD.
2
GKI07113
Test Circuits and Waveforms
L
I
D
V
DS
R
G
V
GS
0V
V
DD
E
AS
½
V
(BR)DSS
1
2
L I
AS
2
V
(BR)DSS
V
DD
V
(BR)DSS
I
AS
V
DS
I
D
V
DD
(a) Test Circuit
Figure 1 Unclamped Inductive Switching
(b) Waveform
R
L
90%
V
GS
V
DS
R
G
V
GS
0V
P.W. = 10
μs
Duty cycle
≤
1 %
(a) Test Circuit
Figure 2 Switching Time
t
d(on)
t
r
t
on
t
d(off)
t
f
t
off
10%
V
DD
V
DS
90%
10%
(b) Waveform
D.U.T.
I
F
L
I
F
V
DD
R
G
V
GS
0V
0V
di/dt
t
rr
I
RM
× 90 %
I
RM
(a) Test Circuit
Figure 3 Diode Reverse Recovery Time
(b) Waveform
GKI07113-DS Rev.1.6
Mar. 30, 2015
SANKEN ELECTRIC CO.,LTD.
3
GKI07113
RDS(ON)-ID characteristics (typical)
VGS=10V
20
18
16
14
Tc = 125℃
RDS(ON)-ID characteristics (typical)
VGS=4.5V
20
18
16
14
Tc = 125℃
ID-VGS characteristics (typical)
VDS=5V
80
70
60
RDS(ON) (mΩ )
RDS(ON) (mΩ )
12
75℃
12
10
75℃
50
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
25℃
ID (A)
25℃
40
30
20
10
0
Tc =125℃
75℃
25℃
8
6
4
2
0
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
ID (A)
ID (A)
VGS (V)
VDS-VGS characteristics (typical)
Tc=25℃
0.6
0.5
IDR-VSD characteristics (typical)
Tc=25℃
80
VGS=10V
IDR-VSD characteristics (typical)
VDS=0V
80
70
60
70
60
0.4
VDS (V)
IDR (A)
50
40
30
3V
0.3
0.2
0.1
0.0
0
5
10
15
IDR (A)
VGS=4.5V
50
40
30
Tc =125℃
75℃
25℃
ID=27.2A
20
ID=15.6A
ID=13.6A
0V
20
10
10
0
0
0.5
1
1.5
0
0
0.5
1
1.5
VGS (V)
VSD (V)
VSD (V)
Capacitance-VDS characteristics (typical)
100000
15
VGS - Qg characteristics (typical)
3
Vth-Tc characteristics (typical)
10000
Capacitance (pF)
Ciss
1000
Coss
VGS (V)
5
Vth (V)
10
2
1
Tc=25℃
VDS=38V
ID=31.2A
100
Ta=25℃
VGS=0V
f =1MHz
Crss
ID=1mA
VGS=VDS
10
0
10
20
30
40
50
0
0
20
40
60
0
25
50
75
100
125
150
VDS (V)
Qg (nC)
Tc (℃)
RDS(ON)-Tc characteristics (typical)
18
16
14
RDS(ON)-Tc characteristics (typical)
18
16
14
96
94
92
BVDSS-Tc characteristics (typical)
RDS（ON） (mΩ)
RDS（ON） (mΩ)
10
8
6
4
2
0
25
50
75
100
125
150
10
8
6
4
BVDSS (V)
12
12
90
88
86
84
82
ID=27.2A
VGS=10V
ID=1mA
VGS=0V
2
0
25
50
75
100
ID=13.6A
VGS=4.5V
125
150
80
78
25
50
75
100
125
150
Tc (℃)
Tc (℃)
Tc (℃)
GKI07113-DS Rev.1.6
Mar. 30, 2015
SANKEN ELECTRIC CO.,LTD.
4
GKI07113
PD-Ta Derating
80
SAFE OPERATING AREA
1000
ID(pulse) MAX
60
100
PT=100μs
ID (A)
ＰＤ
(W)
40
10
PT=1ms
20
1
1 shot
Tc=25℃
0
0.1
0
50
100
150
0.1
1
10
100
Ta (℃)
VDS (V)
TRANSIENT THERMAL RESISTANCE - PULSE WIDTH
1.E+01
Rth j-c (℃/W)
1.E+00
1.E-01
Tc = 25℃
1shot
VDS < 10V
1.E-02
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
P.T. (sec)
GKI07113-DS Rev.1.6
Mar. 30, 2015
SANKEN ELECTRIC CO.,LTD.
5
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