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S29WS128J0SBAI012

Description
IC,EEPROM,NOR FLASH,8MX16,CMOS,BGA,84PIN,PLASTIC
Categorystorage    storage   
File Size2MB,111 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

S29WS128J0SBAI012 Overview

IC,EEPROM,NOR FLASH,8MX16,CMOS,BGA,84PIN,PLASTIC

S29WS128J0SBAI012 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCypress Semiconductor
Reach Compliance Codecompliant
Maximum access time55 ns
startup blockBOTTOM/TOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B84
memory density134217728 bit
Memory IC TypeFLASH
Number of departments/size16,254
Number of terminals84
word count8388608 words
character code8000000
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA84,10X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
Parallel/SerialPARALLEL
power supply1.8 V
Certification statusNot Qualified
ready/busyYES
Department size4K,32K
Maximum standby current0.00005 A
Maximum slew rate0.06 mA
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
switch bitYES
typeNOR TYPE
S29WS128J/064J
128/64 Megabit (8/4 M x 16-Bit)
CMOS 1.8 Volt-only Simultaneous Read/Write,
Burst Mode Flash Memory
ADVANCE
INFORMATION
Notice to Readers:
This document contains information on one or more
products under development at Spansion LLC. The information is intended to
help you evaluate this product. Do not design in this product without contacting
the factory. Spansion LLC reserves the right to change or discontinue work on
this proposed product without notice.
Publication Number
S29WS128J/064J_00
Revision
A
Amendment
3
Issue Date
February 19, 2005
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