PROCESS
3.3 Volt TVS Chip
CPZ35R
Transient Voltage Suppressor
PROCESS DETAILS
Die Size
Die Thickness
Cathode Bonding Pad Area
Top Side Metalization
Back Side Metalization
10.2 x 10.2 MILS
3.9 MILS
7.1 MILS DIAMETER
Al - 30,000Å
Au - 12,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
163,034
PRINCIPAL DEVICE TYPE
CMATVS3V3
R0 (5-January 2012)
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