M366S6453AT0-C1H datasheet, PDF

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M366S6453AT0-C1H: DescriptionSynchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168; Categorystorage storage; File Size149KB，9 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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M366S6453AT0-C1H Overview

Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168

M366S6453AT0-C1H Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	4294967296 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Humidity sensitivity level	1
Number of functions	1
Number of ports	1
Number of terminals	168
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum standby current	0.032 A
Maximum slew rate	1.84 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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M366S6453AT0

M366S6453AT0 SDRAM DIMM

PC100 Unbuffered DIMM

64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

GENERAL DESCRIPTION

The Samsung M366S6453AT0 is a 64M bit x 64 Synchronous

Dynamic RAM high density memory module. The Samsung

M366S6453AT0 consists of sixteen CMOS 32M x 8 bit with

4banks Synchronous DRAMs in TSOP-II 400mil package and a

2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy

substrate. Two 0.1uF decoupling capacitors are mounted on the

printed circuit board in parallel for each SDRAM.

The M366S6453AT0 is a Dual In-line Memory Module and is

intended for mounting into 168-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of

system clock. I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable latencies allows

the same device to be useful for a variety of high bandwidth, high

performance memory system applications.

FEATURE

• Performance range

Part No.

M366S6453AT0-C80

M366S6453AT0-C1H

M366S6453AT0-C1L

•

Max Freq. (Speed)

125MHz (8ns @ CL=3)

100MHz (10ns @ CL=2)

100MHz (10ns @ CL=3)

Burst mode operation

Auto & self refresh capability (8192 Cycles/64ms)

LVTTL compatible inputs and outputs

Single 3.3V

0.3V power supply

MRS cycle with address key programs

Latency (Access from column address)

Burst length (1, 2, 4, 8 & Full page)

Data scramble (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the

system clock

• Serial presence detect with EEPROM

• PCB :

Height (1,375mil),

double sided component

PIN CONFIGURATIONS (Front side/back side)

Pin Front Pin

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DQ8

DQ9

DQ10

DQ11

DQ12

DQ13

DQ14

DQ15

*CB0

*CB1

DQM0

Front

Pin Front Pin

DQ18

DQ19

DQ20

REF

CKE1

DQ21

DQ22

DQ23

DQ24

DQ25

DQ26

DQ27

DQ28

DQ29

DQ30

DQ31

CLK2

**SDA

**SCL

100

101

102

103

104

105

106

107

108

109

110

111

112

Back

DQ32

DQ33

DQ34

DQ35

DQ36

DQ37

DQ38

DQ39

DQ40

DQ41

DQ42

DQ43

DQ44

DQ45

DQ46

DQ47

*CB4

*CB5

CAS

DQM4

113

114

115

116

117

118

119

120

121

122

123

124

125

126

127

128

129

130

131

132

133

134

135

136

137

138

139

140

Back

DQM5

CS1

RAS

BA0

A11

CLK1

A12

CKE0

CS3

DQM6

DQM7

A13

*CB6

*CB7

DQ48

DQ49

141

142

143

144

145

146

147

148

149

150

151

152

153

154

155

156

157

158

159

160

161

162

163

164

165

166

167

168

Back

DQ50

DQ51

DQ52

REF

DQ53

DQ54

DQ55

DQ56

DQ57

DQ58

DQ59

DQ60

DQ61

DQ62

DQ63

CLK3

**SA0

**SA1

**SA2

29 DQM1 57

CS0

38 A10/AP 66

BA1

42 CLK0 70

CS2

46 DQM2 74

47 DQM3 75

52 *CB2 80

53 *CB3 81

55 DQ16 83

56 DQ17 84

PIN NAMES

Pin Name

A0 ~ A12

BA0 ~ BA1

DQ0 ~ DQ63

CLK0 ~ CLK3

CS0 ~ CS3

RAS

CAS

DQM0 ~ 7

REF

SDA

SCL

SA0 ~ 2

Function

Address input (Multiplexed)

Select bank

Data input/output

Clock input

Chip select input

Row address strobe

Column address strobe

Write enable

DQM

Power supply (3.3V)

Ground

Power supply for reference

Serial data I/O

Serial clock

Address in EEPROM

Write protection

Don′t use

No connection

CKE0 ~ CKE1 Clock enable input

* These pins are not used in this module.

These pins should be NC in the system

which does not support SPD.

SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.

Rev. 0.0 Sep. 1999

M366S6453AT0-C1H Related Products

	M366S6453AT0-C1H	M366S6453AT0-C1L	M366S6453AT0-C80
Description	Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168
Is it Rohs certified?	incompatible	incompatible	incompatible
Parts packaging code	DIMM	DIMM	DIMM
package instruction	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168
Contacts	168	168	168
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	6 ns	6 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz	100 MHz	125 MHz
I/O type	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	4294967296 bit	4294967296 bit	4294967296 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	64	64	64
Humidity sensitivity level	1	1	1
Number of functions	1	1	1
Number of ports	1	1	1
Number of terminals	168	168	168
word count	67108864 words	67108864 words	67108864 words
character code	64000000	64000000	64000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C
organize	64MX64	64MX64	64MX64
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225	225	225
power supply	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192
self refresh	YES	YES	YES
Maximum standby current	0.032 A	0.032 A	0.032 A
Maximum slew rate	1.84 mA	1.84 mA	1.92 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO
technology	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	SAMSUNG	-	SAMSUNG

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