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GBL02X0G

Description
Bridge Rectifier Diode, 4A, 200V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size192KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

GBL02X0G Overview

Bridge Rectifier Diode, 4A, 200V V(RRM),

GBL02X0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PSIP-T4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage200 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PSIP-T4
JESD-609 codee3
Maximum non-repetitive peak forward current150 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
GBL005 thru GBL10
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- High case dielectric strength
- Typical IR less than 0.1μA
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Single Phase Bridge Rectifiers
GBL
MECHANICAL DATA
Case:
GBL
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
As marked
Weight:
2 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
@T
C
=50
o
C
@T
A
=40
o
C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@2A
@4A
Maximum reverse current @ rated VR
Typical junction capabitance
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25
o
C
T
J
=125 C
o
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
GBL
005
50
35
50
GBL
01
100
70
100
GBL
02
200
140
200
GBL
04
400
280
400
4
3
150
93
1.0
1.1
5
500
GBL
06
600
420
600
GBL
08
800
560
800
GBL
10
1000
700
1000
Unit
V
V
V
A
I
FSM
I
2
t
V
F
A
A
2
s
V
I
R
Cj
R
θjC
R
θjL
R
θjA
T
J
T
STG
95
μA
40
pF
O
8
13
32
- 55 to +150
- 55 to +150
C/W
O
O
C
C
Document Number: DS_D1408053
Version: I14
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