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CYM9289BPZ-66C

Description
ZBT SRAM, 1MX72, 10.5ns, CMOS, ZIP-168
Categorystorage    storage   
File Size204KB,11 Pages
ManufacturerCypress Semiconductor
Download Datasheet Parametric Compare View All

CYM9289BPZ-66C Overview

ZBT SRAM, 1MX72, 10.5ns, CMOS, ZIP-168

CYM9289BPZ-66C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerCypress Semiconductor
Parts packaging codeDMA
package instructionZIP-168
Contacts168
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time10.5 ns
Maximum clock frequency (fCLK)66 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N168
JESD-609 codee0
memory density75497472 bit
Memory IC TypeZBT SRAM
memory width72
Number of functions1
Number of terminals168
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX72
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeQUIP168B,.08/.23
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
Minimum standby current3.14 V
Maximum slew rate2.4 mA
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

CYM9289BPZ-66C Preview

87
CYM9288/CYM9289
512K/1M x 72 Flowthrough NoBL SRAM Module
Features
• Operates at 66 MHz
• Uses 256K/512K x 18 high performance Flowthrough
NoBL synchronous SRAMs
• 3.3V data inputs/outputs
epoxy laminate board with pins. The modules are designed to
be incorporated into large memory arrays.
Modules are configured as either one or two banks, where
each bank has separate chip select controls. Separate clocks
are provided for every pair of SRAMs.
Multiple ground pins and on-board decoupling capacitors en-
sure high performance with maximum noise immunity.
All components on the cache modules are surface mounted on
a multi-layer epoxy laminate (FR-4) substrate. The contact
pins are plated with 200 micro-inches (minimum) of 90/10
tin/lead over 50 micro-inches of nickel.
Functional Description
The CYM9288/9289 are high-performance synchronous
Flowthrough NoBL memory modules organized as 512K/1M
by 72 bits. These modules are constructed from 256K/512K x
18 NoBL SRAM’s in plastic surface mount packages on an
Logic Block Diagram- CYM9288/9289
A[17:0]
BWE[7:0]
ADV/LD
OE
OE
CE[0:1]
CE0
A
17:0
D[15:0]
DP[1:0]
(4) 256K/512K x 18 SRAM’S
ADV/LD
OE
CS
BW[0]
MODE
D[63:0]
DP[7:0]
WE
MODE
CLK[0:3]
BW[1]
WE
CLK
CLK[0]
CLK[1]
CLK[2]
CLK[3]
BANK 0
A
17:0
ADV/LD
OE
CE1
PD
1
9288
9289
PD
0
OE
CS
BW[0]
BW[1]
NC NC
BANK 0 & 1
GND GND
BANK 0 & 1
D[15:0]
DP[1:0]
MODE
(4) 256K/512K x 18 SRAM’S
WE
CLK
CLK[0]
CLK[1]
CLK[2]
CLK[3]
BANK 1
9288/9289
Cypress Semiconductor Corporation
Document #: 38-05062 Rev. **
3901 North First Street
San Jose
CA 95134 • 408-943-2600
Revised September 4, 2001
CYM9288/CYM9289
Selection Guide
NoBL Synchronous Module
Part Number
Cache Size
SRAMs Used
System Clock (MHz)
Data t
CDV
CYM9288-60
512 K x 72
8 of 256K x 18
60
12 ns
CYM9288-66
512 K x 72
8 of 256K x 18
66
10.5 ns
CYM9289-60
1M x 72
8 of 512K x 18
60
12 ns
CYM9289-66
1M x 72
8 of 512K x 18
66
10.5 ns
Document #: 38-05062 Rev. **
Page 2 of 11
CYM9288/CYM9289
Pin Configuration
Dual Read-Out ZIP
Top View
GND
D63
D62
Vcc3
D60
D58
GND
D56
D55
GND
D53
D51
GND
D49
DP5
Vcc3
D46
D44
GND
D42
D40
GND
D39
D37
GND
D35
D33
GND
CLK3
GND
DP3
D30
Vcc3
D28
D26
GND
D24
D23
GND
D21
D19
GND
D17
DP1
1
2
3
4
5
6
7
8
9
10
11
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
GND
DP7
D61
GND
D59
D57
GND
DP6
D54
Vcc3
D52
D50
GND
D48
D47
GND
D45
D43
GND
D41
DP4
Vcc3
D38
D36
GND
D34
D32
GND
CLK2
GND
D31
D29
GND
D27
D25
GND
DP2
D22
Vcc3
D20
D18
GND
D16
D15
GND
D13
D11
GND
D9
DP0
Vcc3
D6
D4
GND
D2
D0
PD1
A19
A17
GND
A15
A13
Vcc3
A11
A9
GND
A7
A5
GND
A3
A1
ADV/LD
GND
CLK0
GND
BWE6
BWE4
GND
BWE2
BWE0
Vcc3
OE
CE0
GND
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
75
77
78
79
80
81
82
83
84
Vcc3
D14
D12
GND
D10
D8
GND
D7
D5
GND
D3
D1
PD0
MODE
A18
A20
A16
A14
GND
A12
A10
GND
A8
A6
Vcc3
A4
A2
A0
GND
CLK1
GND
BWE7
BWE5
GND
BWE3
BWE1
GND
WE
CE1
GND
9288/9289
Document #: 38-05062 Rev. **
Page 3 of 11
CYM9288/CYM9289
Pin Definitions
Signal
V
CC3
GND
A[20:0]
OE
WE
BWE[7:0]
CS[1:0]
PD
0
–PD
1
D[63:0]
DP[7:0]
CLK[0:3]
ADV/LD
Mode
NC
RSVD
3.3V supply
Ground
Addresses from processor
Output Enable
Write Enable
Byte Write Enables
Chip Select for the two banks
Presence Detect output pins
Data lines from processor
Data Parity lines from processor
Clock lines to the module
Advance Load Signal from processor
Mode pin for Burst Selection
Signal not connected on module
Reserved
Description
Presence Detect Pins
PD
1
CYM9288 - 512K x 72
CYM9289 - 1M x 72
NC
GND
PD
0
NC
GND
Document #: 38-05062 Rev. **
Page 4 of 11
CYM9288/CYM9289
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature –55°C to +125°C
Ambient Temperature
with Power Applied 0°C to +70°C
Supply Voltage to Ground Potential –0.5V to +4.5V
DC Voltage Applied to Outputs
in High Z State –0.5V to +4.6V
DC Input Voltage –0.5V to +4.6V
Output Current into Outputs (LOW)20 mA
Operating Range
Range
Commercial
Ambient
Temperature
0°C to +70°C
V
CC
3.3V
±
5%
Electrical Characteristics
Over the Operating Range
Parameter
V
IH
V
IL
V
OH
V
OL
I
CC
I
CC
(9288)
(9289)
Description
Input HIGH Voltage
Input LOW Voltage
Output HIGH Voltage
Output LOW Voltage
V
CC
Operating Supply Current
V
CC
Operating Supply Current
Test Condition
Min.
2.2
–0.3
Max.
V
CC
+ 0.3
0.8
0.4
2400
2400
Unit
V
V
V
V
mA
mA
V
CC
= Min. I
OH
=
−4
mA
V
CC
= Min. I
OL
= 8 mA
V
CC
= Max., I
OUT
= 0 mA, f = f
MAX
= 1/t
RC
V
CC
= Max., I
OUT
= 0 mA, f = f
MAX
= 1/t
RC
2.4
Capacitance
[1]
Parameter
C
A
Description
Address Input Capacitance
Test Conditions
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 3.3V
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 3.3V
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 3.3V
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 3.3V
Max.
48
Unit
pF
C
I
Control Input Capacitance
48
pF
C
O
Input/Output Capacitance
16
pF
C
CLK
Clock Capacitance
12
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
.................................................................
AC Test Loads and Waveforms
OUTPUT
Z
0
=50Ω
R
L
=50Ω
V
L
= 1.5V
3.3V
OUTPUT
3.0V
5 pF
R=351Ω GND
INCLUDING
JIG AND
SCOPE
R=317Ω
ALL INPUT PULSES
(a)
(b)
Document #: 38-05062 Rev. **
Page 5 of 11

CYM9289BPZ-66C Related Products

CYM9289BPZ-66C CYM9288APZ-66C
Description ZBT SRAM, 1MX72, 10.5ns, CMOS, ZIP-168 ZBT SRAM, 512KX72, 10.5ns, CMOS, ZIP-168
Is it Rohs certified? incompatible incompatible
Maker Cypress Semiconductor Cypress Semiconductor
Parts packaging code DMA DMA
package instruction ZIP-168 ZIP-168
Contacts 168 168
Reach Compliance Code compliant not_compliant
ECCN code 3A991.B.2.A 3A991.B.2.A
Maximum access time 10.5 ns 10.5 ns
Maximum clock frequency (fCLK) 66 MHz 66 MHz
I/O type COMMON COMMON
JESD-30 code R-XDMA-N168 R-XDMA-N168
JESD-609 code e0 e0
memory density 75497472 bit 37748736 bit
Memory IC Type ZBT SRAM ZBT SRAM
memory width 72 72
Number of functions 1 1
Number of terminals 168 168
word count 1048576 words 524288 words
character code 1000000 512000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C
organize 1MX72 512KX72
Output characteristics 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM
Encapsulate equivalent code QUIP168B,.08/.23 QUIP168B,.08/.23
Package shape RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
power supply 3.3 V 3.3 V
Certification status Not Qualified Not Qualified
Minimum standby current 3.14 V 3.14 V
Maximum slew rate 2.4 mA 2.4 mA
Maximum supply voltage (Vsup) 3.465 V 3.465 V
Minimum supply voltage (Vsup) 3.135 V 3.135 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V
surface mount NO NO
technology CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL
Terminal surface TIN LEAD Tin/Lead (Sn/Pb)
Terminal form NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED

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