PMD17K60LEADFREE datasheet, PDF

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PMD17K60LEADFREE: DescriptionPower Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size488KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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PMD17K60LEADFREE Overview

Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

PMD17K60LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
Parts packaging code	TO-204AA
package instruction	TO-3, 2 PIN
Contacts	2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	20 A
Collector-emitter maximum voltage	60 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	800
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz

PMD17K60LEADFREE Preview

PMD16K SERIES

PMD17K SERIES

NPN

PNP

w w w. c e n t r a l s e m i . c o m

COMPLEMENTARY SILICON

DARLINGTON POWER

TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR PMD16K, PMD17K

series types are complementary silicon Darlington power

transistors, manufactured by the epitaxial base process,

mounted in a hermetically sealed metal package, and

designed for power switching applications.

MARKING: FULL PART NUMBER

TO-3 CASE

PMD16K60

SYMBOL PMD17K60

VCBO

60

VCEO

60

VEBO

IC

ICM

IB

PD

TJ, Tstg



JC

PMD16K80

PMD17K80

80

5.0

20

40

500

200

-65 to +200

0.875

PMD16K100

PMD17K100 UNITS

100

V

100

V

A

mA

W

°C

°C/W

MAXIMUM RATINGS:

(TC=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

ICER

VCE=Rated VCEO, RBE=1.0kΩ

ICER

IEBO

BVCEO

VCE(SAT)

VBE(SAT)

VBE(ON)

hFE

hfe

fT

Cob

VCE=Rated VCEO, RBE=1.0kΩ, TC=150°C

VEB=5.0V

IC=100mA (PMD16K60, 17K60)

IC=100mA (PMD16K80, 17K80)

IC=100mA (PMD16K100, 17K100)

IC=10A, IB=40mA

VCE=3.0V,

IC=10A

IC=10A (PMD16K series)

1.0K

800

300

4.0

60

80

100

MAX

1.0

5.0

2.0

UNITS

mA

V

2.0

2.8

20K

V

VCE=3.0V, IC=10A (PMD17K series)

VCE=3.0V, IC=7.0A, f=1.0kHz

VCE=3.0V, IC=7.0A, f=1.0MHz

VCB=10V, IE=0, f=1.0MHz

MHz

400

pF

R1 (26-November 2012)

PMD16K SERIES

PMD17K SERIES

NPN

PNP

COMPLEMENTARY SILICON

DARLINGTON POWER

TRANSISTORS

TO-3 CASE - MECHANICAL OUTLINE

R2

LEAD CODE:

1) Base

2) Emitter

Case) Collector

MARKING:

FULL PART NUMBER

R1 (26-November 2012)

w w w. c e n t r a l s e m i . c o m

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PMD17K60LEADFREE Related Products

	PMD17K60LEADFREE	PMD16K60LEADFREE	PMD17K100LEADFREE	PMD17K80LEADFREE
Description	Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 20A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Is it lead-free?	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Parts packaging code	TO-204AA	TO-204AA	TO-204AA	TO-204AA
package instruction	TO-3, 2 PIN	TO-3, 2 PIN	TO-3, 2 PIN	TO-3, 2 PIN
Contacts	2	2	2	2
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	20 A	20 A	20 A	20 A
Collector-emitter maximum voltage	60 V	60 V	100 V	80 V
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	800	800	800	800
JEDEC-95 code	TO-3	TO-3	TO-3	TO-3
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e3	e3	e3	e3
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260	260	260
Polarity/channel type	PNP	NPN	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	10	10	10	10
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	4 MHz	4 MHz	4 MHz	4 MHz

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