KMCJ536512-6 datasheet, PDF - EEWORLD Datasheet

KMCJ536512-6: DescriptionDRAM Card, 512KX36, 60ns, MOS; Categorystorage storage; File Size306KB，12 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KMCJ536512-6 Overview

DRAM Card, 512KX36, 60ns, MOS

Parameter Name	Attribute value
Maker	SAMSUNG
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Spare memory width	18
JESD-30 code	X-XXMA-X88
memory density	18874368 bit
Memory IC Type	DRAM CARD
memory width	36
Number of functions	1
Number of ports	1
Number of terminals	88
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX36
Output characteristics	3-STATE
Package body material	UNSPECIFIED
Package shape	UNSPECIFIED
Package form	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified
refresh cycle	1024
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	MOS
Temperature level	COMMERCIAL
Terminal form	UNSPECIFIED
Terminal location	UNSPECIFIED

	KMCJ536512-6	KMCJ536512-8	KMCJ536512-7
Description	DRAM Card, 512KX36, 60ns, MOS	DRAM Card, 512KX36, 80ns, MOS	DRAM Card, 512KX36, 70ns, MOS
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
access mode	FAST PAGE	FAST PAGE	FAST PAGE
Maximum access time	60 ns	80 ns	70 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Spare memory width	18	18	18
JESD-30 code	X-XXMA-X88	X-XXMA-X88	X-XXMA-X88
memory density	18874368 bit	18874368 bit	18874368 bit
Memory IC Type	DRAM CARD	DRAM CARD	DRAM CARD
memory width	36	36	36
Number of functions	1	1	1
Number of ports	1	1	1
Number of terminals	88	88	88
word count	524288 words	524288 words	524288 words
character code	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C
organize	512KX36	512KX36	512KX36
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified	Not Qualified	Not Qualified
refresh cycle	1024	1024	1024
Maximum supply voltage (Vsup)	5.25 V	5.25 V	5.25 V
Minimum supply voltage (Vsup)	4.75 V	4.75 V	4.75 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V
surface mount	NO	NO	NO
technology	MOS	MOS	MOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Maker	SAMSUNG	-	SAMSUNG

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