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PN4258D74Z

Description
RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size739KB,14 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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PN4258D74Z Overview

RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP, TO-92

PN4258D74Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH SPEED SATURATED SWITCHING
Maximum collector current (IC)0.2 A
Collector-based maximum capacity3 pF
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)0.6 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)700 MHz
PN4258 / MMBT4258
PN4258
MMBT4258
C
E
C
B
TO-92
E
SOT-23
Mark: 78
B
PNP Switching Transistor
This device is designed for very high speed saturated switching
at collector currents to 100 mA. Sourced from Process 65.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
12
12
4.5
200
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PN4258
350
2.8
125
357
Max
*MMBT4258
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation

PN4258D74Z Related Products

PN4258D74Z PN4258D75Z PN4258D26Z MMBT4258D87Z
Description RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP, TO-92 RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP, TO-92 RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP, TO-92 RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Other features HIGH SPEED SATURATED SWITCHING HIGH SPEED SATURATED SWITCHING HIGH SPEED SATURATED SWITCHING HIGH SPEED SATURATED SWITCHING
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A 0.2 A
Collector-based maximum capacity 3 pF 3 pF 3 pF 3 pF
Collector-emitter maximum voltage 12 V 12 V 12 V 12 V
Configuration SINGLE SINGLE SINGLE SINGLE
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 R-PDSO-G3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND RECTANGULAR
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO YES
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location BOTTOM BOTTOM BOTTOM DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 700 MHz 700 MHz 700 MHz 700 MHz
Is it Rohs certified? conform to conform to conform to -
Maker Fairchild - Fairchild Fairchild
Minimum DC current gain (hFE) 30 30 30 -
JEDEC-95 code TO-92 TO-92 TO-92 -
JESD-609 code e3 e3 e3 -
Maximum operating temperature 140 °C 140 °C 140 °C -
Maximum power dissipation(Abs) 0.6 W 0.6 W 0.6 W -
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) -
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