Rectifier Diode, 1 Phase, 1 Element, 430A, 1000V V(RRM), Silicon, DO-200AA,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | International Rectifier （ Infineon ） |
| package instruction | O-CEDB-N2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| application | FAST RECOVERY |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.83 V |
| JEDEC-95 code | DO-200AA |
| JESD-30 code | O-CEDB-N2 |
| JESD-609 code | e0 |
| Maximum non-repetitive peak forward current | 5445 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 125 °C |
| Maximum output current | 430 A |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND |
| Package form | DISK BUTTON |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 1000 V |
| Maximum reverse recovery time | 2 µs |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | NO LEAD |
| Terminal location | END |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
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