MCC95-16io8B
Thyristor Module
V
RRM
I
TAV
V
T
=
2x 1600 V
=
=
116 A
1.28 V
Phase leg
Part number
MCC95-16io8B
Backside: isolated
3
6
1
5
2
Features / Advantages:
●
Thyristor for line frequency
●
Planar passivated chip
●
Long-term stability
●
Direct Copper Bonded Al2O3-ceramic
Applications:
●
Line rectifying 50/60 Hz
●
Softstart AC motor control
●
DC Motor control
●
Power converter
●
AC power control
●
Lighting and temperature control
Package:
TO-240AA
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Soldering pins for PCB mounting
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191111d
© 2019 IXYS all rights reserved
MCC95-16io8B
Thyristor
Symbol
V
RSM/DSM
V
RRM/DRM
I
R/D
V
T
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 125 °C
T
VJ
= 125 °C
min.
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
Ratings
typ.
max. Unit
1700
V
1600
200
5
1.29
1.50
1.28
1.70
116
182
0.85
2.4
0.20
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 125 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 125 °C
V
R
= 0 V
T
VJ
= 25°C
T
C
= 125 °C
119
10
5
0.5
T
VJ
= 125 °C; f = 50 Hz
repetitive, I
T
= 250 A
t
P
= 200 µs; di
G
/dt = 0.45 A/µs;
I
G
= 0.45 A; V =
⅔
V
DRM
non-repet., I
T
= 116 A
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= 25 °C
T
VJ
= 25 °C
185
V =
⅔
V
DRM
R
GK
=
∞; method 1 (linear voltage rise)
V
D
= 6 V
V
D
= 6 V
V
D
=
⅔
V
DRM
t
p
=
10 µs
455
2.25
2.43
1.92
2.07
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
W
kA
kA
kA
kA
V
R/D
= 1600 V
V
R/D
= 1600 V
I
T
= 150 A
I
T
= 300 A
I
T
= 150 A
I
T
= 300 A
I
TAV
I
T(RMS)
V
T0
r
T
R
thJC
R
thCH
P
tot
I
TSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 85 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.22 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
25.3 kA²s
24.6 kA²s
18.3 kA²s
17.7 kA²s
pF
W
W
W
C
J
P
GM
P
GAV
(di/dt)
cr
junction capacitance
max. gate power dissipation
V
R
= 400 V f = 1 MHz
t
P
= 30 µs
t
P
= 300 µs
average gate power dissipation
critical rate of rise of current
150 A/µs
500 A/µs
1000 V/µs
2.5
2.6
150
200
0.2
10
450
200
2
V
V
mA
mA
V
mA
mA
mA
µs
µs
(dv/dt)
cr
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
holding current
gate controlled delay time
V
D
= 6 V R
GK
=
∞
V
D
= ½ V
DRM
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
turn-off time
V
R
= 100 V; I
T
= 150A; V =
⅔
V
DRM
T
VJ
=100 °C
di/dt = 10 A/µs dv/dt =
20 V/µs t
p
= 200 µs
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191111d
© 2019 IXYS all rights reserved
MCC95-16io8B
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
TO-240AA
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
200
125
100
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
81
2.5
2.5
13.0
16.0
9.7
16.0
3600
3000
4
4
Ordering
Standard
Ordering Number
MCC95-16io8B
Marking on Product
MCC95-16io8B
Delivery Mode
Box
Quantity
36
Code No.
457930
Similar Part
MCMA110P1600TA
MCMA140P1600TA
Package
TO-240AA-1B
TO-240AA-1B
Voltage class
1600
1600
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Thyristor
* on die level
T
VJ
= 125°C
V
0 max
R
0 max
0.85
1.2
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191111d
© 2019 IXYS all rights reserved
MCC95-16io8B
Outlines TO-240AA
3
6
1
5
2
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191111d
© 2019 IXYS all rights reserved
MCC95-16io8B
Thyristor
2500
10
5
V
R
= 0 V
250
2000
I
TSM
1500
50 Hz
80% V
RRM
T
VJ
= 45°C
T
VJ
= 125°C
200
I
2
t
[A s]
T
VJ
= 45°C
2
150
DC
180 ° sin
120 °
60 °
30 °
I
TAVM
100
[A]
1000
[A]
50
T
VJ
= 125°C
500
0.001
10
4
0.01
0.1
1
1
2
2
0
3
4 5 6 7 8 910
0
25
50
75 100 125 150
t [s]
Fig. 1 Surge overload current I
TSM
,
I
FSM
: Crest value, t: duration
250
t [ms]
Fig. 2 I t versus time (1-10 ms)
T
C
[°C]
Fig. 3 Max. forward current
at case temperature
10
R
thKA
K/W
200
P
tot
150
DC
180 ° sin
120 °
60 °
30 °
[W]
100
0.4
0.6
0.8
1
1.2
1.5
2
3
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
V
G
[V]
1
1
2
3
5
4
6
50
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
0
0
50
100
150
0
50
100
0.1
I
GD
, T
VJ
= 125°C
1
10
100
1000
10000
I
TAVM
, I
FAVM
[A]
T
a
[°C]
I
G
[mA]
Fig. 5 Gate trigger characteristics
Fig. 4 Power dissipation vs. on-state current & ambient temperature
(per thyristor or diode)
1000
1000
R
thKA
K/W
0.03
0.06
0.08
0.12
0.15
0.3
0.5
Circuit
B6
3x MCC95 or
3x MCD95
T
VJ
= 25°C
800
100
typ.
Limit
P
tot
600
t
gd
[µs]
10
[W]
400
200
0
0
100
200
300
0
50
100
150
1
10
100
1000
I
dAVM
[A]
T
a
[°C]
I
G
[mA]
Fig. 7 Gate controlled delay time
Fig. 6 Three phase rectifier bridge: Power dissipation vs. direct
output current and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191111d
© 2019 IXYS all rights reserved
京公网安备 11010802033920号
EEWORLD
