IDT7M4016S35C datasheet, PDF - EEWORLD Datasheet

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IDT7M4016S35C: DescriptionSRAM Module, 256KX16, 35ns, CMOS; Categorystorage storage; File Size145KB，6 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT7M4016S35C Overview

SRAM Module, 256KX16, 35ns, CMOS

IDT7M4016S35C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant
ECCN code	3A991.B.2.A
Maximum access time	35 ns
I/O type	COMMON
JESD-30 code	R-XDMA-T48
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	SRAM MODULE
memory width	16
Number of functions	1
Number of terminals	48
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX16
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIP
Encapsulate equivalent code	DIP48,.9
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.48 A
Minimum standby current	4.5 V
Maximum slew rate	2.4 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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IDT7M4016S35C Related Products

	IDT7M4016S35C	IDT7M4016S55CB	IDT7M4016S55C	IDT7M4016S25C	2SK1486	IDT7M4016S35CB	IDT7M4016S70CB	IDT7M4016S45C
Description	SRAM Module, 256KX16, 35ns, CMOS	SRAM Module, 256KX16, 55ns, CMOS	SRAM Module, 256KX16, 55ns, CMOS	SRAM Module, 256KX16, 25ns, CMOS	Drain Current –ID=32A@ TC=25C	SRAM Module, 256KX16, 35ns, CMOS	SRAM Module, 256KX16, 70ns, CMOS	SRAM Module, 256KX16, 45ns, CMOS
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	-	incompatible	incompatible	incompatible
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	-	not_compliant	not_compliant	not_compliant
ECCN code	3A991.B.2.A	3A001.A.2.C	3A991.B.2.A	3A991.B.2.A	-	3A001.A.2.C	3A001.A.2.C	3A991.B.2.A
Maximum access time	35 ns	55 ns	55 ns	25 ns	-	35 ns	70 ns	45 ns
I/O type	COMMON	COMMON	COMMON	COMMON	-	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-T48	R-XDMA-T48	R-XDMA-T48	R-XDMA-T48	-	R-XDMA-T48	R-XDMA-T48	R-XDMA-T48
JESD-609 code	e0	e0	e0	e0	-	e0	e0	e0
memory density	4194304 bit	4194304 bit	4194304 bit	4194304 bit	-	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	-	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	16	16	16	16	-	16	16	16
Number of functions	1	1	1	1	-	1	1	1
Number of terminals	48	48	48	48	-	48	48	48
word count	262144 words	262144 words	262144 words	262144 words	-	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	-	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	125 °C	70 °C	70 °C	-	125 °C	125 °C	70 °C
organize	256KX16	256KX16	256KX16	256KX16	-	256KX16	256KX16	256KX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	-	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIP	DIP	DIP	DIP	-	DIP	DIP	DIP
Encapsulate equivalent code	DIP48,.9	DIP48,.9	DIP48,.9	DIP48,.9	-	DIP48,.9	DIP48,.9	DIP48,.9
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	-	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	225	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	-	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.48 A	0.48 A	0.48 A	0.48 A	-	0.48 A	0.48 A	0.48 A
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V	-	4.5 V	4.5 V	4.5 V
Maximum slew rate	2.4 mA	2.56 mA	2.4 mA	2.56 mA	-	2.56 mA	2.56 mA	2.4 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	-	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	-	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	-	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	-	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	-	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	MILITARY	COMMERCIAL	COMMERCIAL	-	MILITARY	MILITARY	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	-	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	-	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	30	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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