HY5PS561621AFP-33 datasheet, PDF

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HY5PS561621AFP-33: DescriptionDDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, LEAD FREE, FBGA-84; Categorystorage storage; File Size3MB，78 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/; Environmental Compliance

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HY5PS561621AFP-33 Overview

DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, LEAD FREE, FBGA-84

HY5PS561621AFP-33 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SK Hynix
Parts packaging code	BGA
package instruction	TFBGA, BGA84,9X15,32
Contacts	84
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.45 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	303 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B84
JESD-609 code	e1
length	13 mm
memory density	268435456 bit
Memory IC Type	DDR DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	84
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	16MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA84,9X15,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.008 A
Maximum slew rate	0.23 mA
Maximum supply voltage (Vsup)	2.1 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
width	8 mm

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HY5PS561621AFP

256Mb(16Mx16) DDR2 SDRAM

HY5PS561621AFP

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 1.2 / Jun. 2006

HY5PS561621AFP-33 Related Products

	HY5PS561621AFP-33	HY5PS561621AFP-25	HY5PS561621AFP-22	HY5PS561621AFP-2	HY5PS561621AFP-28
Description	DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, LEAD FREE, FBGA-84	DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84, LEAD FREE, FBGA-84	DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, LEAD FREE, FBGA-84	DDR DRAM, 16MX16, 0.3ns, CMOS, PBGA84, LEAD FREE, FBGA-84	DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, LEAD FREE, FBGA-84
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Parts packaging code	BGA	BGA	BGA	BGA	BGA
package instruction	TFBGA, BGA84,9X15,32	TFBGA, BGA84,9X15,32	TFBGA, BGA84,9X15,32	TFBGA, BGA84,9X15,32	TFBGA, BGA84,9X15,32
Contacts	84	84	84	84	84
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.45 ns	0.4 ns	0.35 ns	0.3 ns	0.45 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	303 MHz	400 MHz	454 MHz	500 MHz	357 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	4,8	4,8	4,8	4,8	4,8
JESD-30 code	R-PBGA-B84	R-PBGA-B84	R-PBGA-B84	R-PBGA-B84	R-PBGA-B84
JESD-609 code	e1	e1	e1	e1	e1
length	13 mm	13 mm	13 mm	13 mm	13 mm
memory density	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	16	16	16	16	16
Number of functions	1	1	1	1	1
Number of ports	1	1	1	1	1
Number of terminals	84	84	84	84	84
word count	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C
organize	16MX16	16MX16	16MX16	16MX16	16MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	BGA84,9X15,32	BGA84,9X15,32	BGA84,9X15,32	BGA84,9X15,32	BGA84,9X15,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260	260	260	260	260
power supply	1.8 V	1.8 V	2 V	2 V	1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES	YES
Continuous burst length	4,8	4,8	4,8	4,8	4,8
Maximum standby current	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A
Maximum slew rate	0.23 mA	0.25 mA	0.26 mA	0.27 mA	0.24 mA
Maximum supply voltage (Vsup)	2.1 V	2.1 V	2.1 V	2.1 V	2.1 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.9 V	1.9 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	2 V	2 V	1.8 V
surface mount	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	20	20	20	20	20
width	8 mm	8 mm	8 mm	8 mm	8 mm
Maker	SK Hynix	-	SK Hynix	SK Hynix	SK Hynix

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