TVS/ESD Arrays - RLST23A2.82LV Series
Features
• 400 Watts peak pulse power (tp = 8/20μs)
• Transient protection for high speed data lines to
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 24A (8/20μs)
• One device protects one unidirectional line
• Two devices protect two high-speed line pairs
• Low capacitance
• Low leakage current
• Low operating and clamping voltages
• Solid-state EPD TVS process technology
Mechanical Characteristics
•
SOT-23
package
• Molding compound flammability rating: UL 94V-0
• Packaging: Tape and Reel per EIA 481
• Lead Finish: Matte tin
• RoHS Compliant
Pinout and Functional Block Diagram
Applications
• 10/100 Ethernet
• WAN/LAN Equipment
• Switching Systems
• Desktops, Servers, Notebooks & Handhelds
• Laser Diode Protection
• Base Stations
1
3
2
Life Support Note
• Not Intended for Use in Life Support or Life
Saving Applications
• The products shown herein are not designed
for use in life sustaining or life saving
applications unless otherwise expressly indicated
SOT23 (Top View)
Circuit Protection
System
Specifications are subject to change without notice.
Please refer to
http://www.ruilon.com
for current information.
Page:1
TVS/ESD Arrays - RLST23A2.82LV Series
Applications Information
Device Connection Options
Electronic equipment is susceptible to transient disturbanc-
es from a variety of sources including: ESD to an open
connector or interface, direct or nearby lightning strikes to
cables and wires, and charged cables “hot plugged” into I/
O ports. The RLST23A2.82LV is designed to protect sensitive
components from damage and latchup which may result from
such transient events. The RLST23A2.82LV can be configured
to protect either one unidirectional line or two (one line pair)
high-speed data lines. The options for connecting the devices
are as follows:
1. Protection of one unidirectional I/O line: Protection
of one data line is achieved by connecting pin 3 to the
protected line, and pins 1 and 2 to ground. This connection
option will allow the device to operate on lines with positive
polarity signal transitions (during normal operation). In
this configuration, the device adds a maximum loading
capacitance of 100pF. During positive duration transients,
the internal TVS diode will be reversed biased and will act in
the avalanche mode, conducting the transient current from
pin 3 to 1. The transient will be clamped at or below the
rated clamping voltage of the device. For negative duration
transients, the internal steering diode is forward biased,
conducting the transient current from pin 2 to 3. The transient
is clamped below the rated forward voltage drop of the
diode.
2. Low capacitance protection of one differential line pair:
Protection of a high-speed differential line pair is achieved
by connecting two devices in antiparallel. Pin 1 of the first
device is connected to line 1 and pin 2 is connected to line 2.
Pin 2 of the second device is connected to line 1 and pin 1 is
connected to line 2 as shown. Pin 3 must be left open on both
devices. During negative duration transients, the first device
will conduct from pin 2 to 1. The steering diode conducts
in the forward direction while the TVS will avalanche and
conduct in the reverse direction. During positive transients,
the second device will conduct in the same manner. In this
configuration, the total loading capacitance is the sum of the
capacitance (between pins
1 and 2) of each device (typically <10pF) making this
configuration suitable for high-speed interfaces such as
10/100 Ethernet (See application note SI98-02).
RLST23A2.82LV Circuit Diagram
1
3
2
Protection of one unidirectional line
Low capacitance protection of one high-
speed line pair
EPD TVS Characteristics
The RLST23A2.82LV is constructed using Semtech’s proprietary
EPD technology. The structure of the EPD TVS is vastly
different from the traditional pn-junction devices. At voltages
below 5V, high leakage current and junction capacitance
render conventional avalanche technology impractical for
most applications. However, by utilizing the EPD technology,
the RLST23A2.82LV can effectively operate at 2.8V while
maintaining excellent electrical characteristics.
The EPD TVS employs a complex nppn structure in contrast to
the pn structure normally found in traditional silicon-avalanche
TVS diodes. The EPD mechanism is achieved by engineering
the center region of the device such that the reverse biased
junction does
Specifications are subject to change without notice.
Circuit Protection
System
Please refer to
http://www.ruilon.com
for current information.
Page:4
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