SKM200GBD126D
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 900 V
V
GE
≤
15 V
V
CES
≤
1200 V
T
j
= 25 °C
T
j
= 150 °C
T
c
= 25 °C
T
c
= 80 °C
1200
264
186
150
300
-20 ... 20
T
j
= 125 °C
10
-40 ... 150
T
c
= 25 °C
T
c
= 80 °C
34
23
30
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
60
414
-40 ... 150
T
c
= 25 °C
T
c
= 80 °C
250
169
200
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
400
1656
-40 ... 150
500
-40 ... 125
AC sinus 50 Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMITRANS 3
Trench IGBT Modules
SKM200GBD126D
Preliminary Data
Features
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x I
C
• UL recognized, file no. E63532
®
V
GES
t
psc
T
j
I
F
I
Fnom
I
FRM
I
FSM
T
j
Inverse diode
T
j
= 150 °C
Freewheeling diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
T
j
= 150 °C
Typical Applications*
• Current source inverter
Remarks
• The Fig.1 to Fig.9 are based on
measurements of the
SKM200GB126D
• The series diodes (FWD) have the data
of the inverse diodes of the
SKM300GB126D
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
Conditions
I
C
= 150 A
V
GE
= 15 V
chiplevel
chiplevel
V
GE
= 15 V
chiplevel
V
GE
=V
CE
, I
C
= 6 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 20 V
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
min.
typ.
1.71
2.00
1
0.9
4.7
7.3
max.
2.10
2.45
1.2
1.1
6.0
9.0
6.5
2.0
Unit
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
5
5.8
10.7
0.56
0.48
1530
5.0
GBD
© by SEMIKRON
Rev. 1.0 – 06.08.2015
1
SKM200GBD126D
Characteristics
Symbol
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
V
CC
= 600 V
I
C
= 150 A
V
GE
= +15/-15 V
R
G on
= 1.5
Ω
R
G off
= 1.5
Ω
Conditions
min.
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
typ.
260
40
18
540
110
24
max.
Unit
ns
ns
mJ
ns
ns
mJ
SEMITRANS
®
3
Trench IGBT Modules
SKM200GBD126D
Preliminary Data
Features
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x I
C
• UL recognized, file no. E63532
R
th(j-c)
per IGBT
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
2.00
1.80
1.1
0.85
30
32
12
1
0.13
2.50
2.30
1.45
1.2
35
37
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
Inverse diode
V
F
= V
EC
I
F
= 30 A
V
GE
= 0 V
chiplevel
V
F0
chiplevel
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
chiplevel
I
F
= 15 A
di/dt
off
= 150 A/µs
V
GE
= -15 V
V
CC
= 600 V
per diode
1.5
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
1.60
1.60
1
0.8
3.0
4.0
290
44
18
0.25
15
1.80
1.80
1.1
0.9
3.5
4.5
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
nH
mΩ
mΩ
Typical Applications*
• Current source inverter
Remarks
• The Fig.1 to Fig.9 are based on
measurements of the
SKM200GB126D
• The series diodes (FWD) have the data
of the inverse diodes of the
SKM300GB126D
Freewheeling diode
V
F
= V
EC
I
F
= 200 A
V
GE
= 0 V
chiplevel
V
F0
chiplevel
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w
terminal-chip
per module
to heat sink M6
chiplevel
I
F
= 200 A
T
j
= 125 °C
di/dt
off
= 6200 A/µs T = 125 °C
j
V
GE
= ±15 V
T
j
= 125 °C
V
CC
= 600 V
per Diode
T
C
= 25 °C
T
C
= 125 °C
3
to terminals M6
2.5
0.35
0.5
0.02
0.038
5
5
325
K/W
Nm
Nm
Nm
g
GBD
2
Rev. 1.0 – 06.08.2015
© by SEMIKRON
SKM200GBD126D
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1.0 – 06.08.2015
3
SKM200GBD126D
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Transient thermal impedance of IGBT
Z
thp(j-c)
= f (t
p
); D = t
p
/t
c
= t
p
*f
Fig. 10: Transient thermal impedance of FWD
Z
thp(j-c)
=f(t
p
): D=t
p
/t
c
=t
p
*f
Fig. 11: CAL diode forward characteristic
Fig. 12: Typ. CAL diode peak reverse recovery current
4
Rev. 1.0 – 06.08.2015
© by SEMIKRON
SKM200GBD126D
SEMITRANS 3
GBD
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1.0 – 06.08.2015
5
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