ZDT6757TA datasheet, PDF - EEWORLD Datasheet

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ZDT6757TA: DescriptionPower Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN; CategoryDiscrete semiconductor The transistor; File Size37KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZDT6757TA Overview

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN

ZDT6757TA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SM-8, 8 PIN
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	300 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	8
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN AND PNP
Maximum power consumption environment	2.75 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz

ZDT6757TA Preview

SM-8 COMPLEMENTARY MEDIUM POWER

TRANSISTORS

ISSUE 1 - NOVEMBER 1995

ZDT6757

C

1

C

1

C

2

C

2

PARTMARKING DETAIL T6757

B

1

E

1

B

2

E

2

NPN

PNP

SM-8

(8 LEAD SOT223)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

NPN

300

5

1

0.5

PNP

-300

-5

-1

-0.5

UNIT

V

A

°C

Operating and Storage Temperature Range T

j

:T

stg

-55 to +150

THERMAL CHARACTERISTICS

PARAMETER

Total Power Dissipation at T

amb

= 25°C*

Any single die on

Both die on equally

Derate above 25°C*

Any single die on

Both die on equally

Thermal Resistance - Junction to Ambient*

Any single die on

Both die on equally

SYMBOL

P

tot

VALUE

2.25

2.75

18

22

55.6

45.5

UNIT

W

mW/ °C

°C/ W

* The power which can be dissipated assuming the device is mounted in a typical manner

on a PCB with copper equal to 2 inches square.

3 - 378

ZDT6757

NPN TRANSISTOR

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cutoff

Current

Emitter Cutoff Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter Turn-On

Voltage

Static Forward

Current Transfer Ratio

Transition

Frequency

Output Capacitance

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

f

T

C

obo

50

40

30

20

MHz

pF

MIN.

300

5

100

0.5

1

TYP.

MAX.

UNIT

V

nA

V

CONDITIONS.

I

C

=100

µ

A, I

E

=0

I

C

=10mA, I

B

=0*

I

E

=100

µ

A, I

C

=0

V

CB

=200V, I

E

=0

V

EB

=3V, I

C

=0

I

C

=100mA, I

B

=10mA*

I

C

=100mA, I

B

=10mA*

I

C

=100mA, V

CE

=5V*

I

C

=100mA, V

CE

=5V

I

C

=10mA, V

CE

=5V

I

C

=10mA, V

CE

=20V

f=20MHz

V

CB

=20V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

For typical characteristics graphs see FZT657 datasheet.

3 - 379

ZDT6757

PNP TRANSISTOR

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cutoff

Current

Emitter Cutoff Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter Turn-On

Voltage

Static Forward

Current Transfer Ratio

Transition

Frequency

Output Capacitance

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

f

T

C

obo

50

40

30

20

MHz

pF

MIN.

-300

-5

TYP.

MAX.

UNIT

V

nA

V

CONDITIONS.

I

C

=-100

µ

A, I

E

=0

I

C

=-10mA, I

B

=0*

I

E

=-100

µ

A, I

C

=0

V

CB

=-160V, I

E

=0

V

CB

=-200V, I

E

=0

V

EB

=-3V, I

C

=0

I

C

=-100mA, I

B

=-10mA*

I

C

=-100mA, I

B

=-10mA*

I

C

=-100mA, V

CE

=-5V*

I

C

=-100mA, V

CE

=-5V*

I

C

=-10mA, V

CE

=-5V*

I

C

=-10mA, V

CE

=-20V

f=20MHz

V

CB

=-20V, f=1MHz

-100

-0.5

-1.0

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

For typical characteristics graphs see FZT757 datasheet.

3 - 380

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ZDT6757TA Related Products

	ZDT6757TA	ZDT6757TC
Description	Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN	Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN
Maker	Zetex Semiconductors	Zetex Semiconductors
package instruction	SM-8, 8 PIN	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	not_compliant	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A
Collector-emitter maximum voltage	300 V	300 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	50	50
JESD-30 code	R-PDSO-G8	R-PDSO-G8
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	2	2
Number of terminals	8	8
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN AND PNP	NPN AND PNP
Maximum power consumption environment	2.75 W	2.75 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	MATTE TIN	MATTE TIN
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz

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