ZTX601BSTZ datasheet, PDF - EEWORLD Datasheet

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ZTX601BSTZ: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size533KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZTX601BSTZ Overview

Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX601BSTZ Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-W3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-based maximum capacity	15 pF
Collector-emitter maximum voltage	160 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	5000
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power consumption environment	2.5 W
Certification status	Not Qualified
Guideline	CECC
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
VCEsat-Max	1.2 V

ZTX601BSTZ Preview

OBSOLETE

NPN SILICON PLANAR MEDIUM POWER

DARLINGTON TRANSISTORS

ISSUE 2 JUNE 94

FEATURES

* 160 Volt V

CEO

* 1 Amp continuous current

* Gain of 5K at I

=1 Amp

* P

tot

= 1 Watt

ZTX600

ZTX601

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation

at T

amb

=25°C

derate above 25°C

SYMBOL

CBO

CEO

EBO

tot

stg

ZTX600

160

140

5.7

E-Line

TO92 Compatible

ZTX601

180

160

UNIT

mW/ °C

°C

Operating and Storage Temperature Range

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL

160

140

0.01

EBO

CES

CE(sat)

BE(sat)

BE(on)

0.75

0.85

1.7

1.5

0.1

1.1

1.2

1.9

1.7

3-206

0.75

0.85

1.7

1.5

ZTX600

MIN. TYP.

Collector-Base

(BR)CBO

Breakdown Voltage

Collector-Emitter

(BR)CEO

Breakdown Voltage

Emitter-Base

(BR)EBO

Breakdown Voltage

Collector Cut-Off

Current

CBO

180

160

ZTX601

MAX. MIN. TYP.

MAX.

UNIT CONDITIONS.

=100

=10mA*

=100

=140V

=160V

=140V,

=100°C

=160V,

=100°C

=8V

CES

=140V

CES

=160V

=0.5A, I

=5mA*

=1A, I

=10mA*

=1A, I

=10mA*

IC=1A, V

=5V*

0.01

0.1

Emitter Cut-Off

Current

Colllector-Emitter

Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

1.1

1.2

1.9

1.7

OBSOLETE

ZTX600

ZTX601

UNIT CONDITIONS.

=50mA, V

=10V*

=0.5A, V

=10V*

=1A, V

=10V*

=50mA, V

=10V*

=0.5A, V

=10V*

=1A, V

=10V*

=50mA, V

=10V*

=0.5A, V

=10V*

=1A, V

=10V*

MHz

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL

ZTX600

MIN. TYP.

Static Forward

Current Transfer

Ratio

Group A

Group B

Transition

Frequency

Input Capacitance

Output

Capacitance

Switching Times

ibo

obo

off

= 50KΩ

MAX. MIN. TYP.

100K 2K

MAX.

100K

10K

150

10K

20K

10K

250

0.75

2.2

20K

10K

20K

10K

250

0.75

2.2

20K

100K

100K 10K

150

=100mA,

=10V f=20MHz

=0.5V, f=1MHz

=10V, f=1MHz

=0.5A, V

=10V

=0.5mA

*Measured under pulsed conditions. Pulse width=300

s. Duty cycle

≤

Maximum Power Dissipation (W)

1.0

= 5KΩ

0.8 R

= 1MΩ

∞

0.6

0.4

0.2

100

200

DC Conditions

- Collector-Emitter Voltage (Volts)

Voltage Derating Graph

The maximum permissible operational temperature can be obtained from this graph using the

following equation

amb

(

max

)

Power

(max ) −

Power

(

act)

0.0057

+25°

amb(max)

= Maximum operating ambient temperature

Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V

and source resistance (R

)

Power(actual)= Actual power dissipation in users circuit

3-207

ZTX600

ZTX601

OBSOLETE

TYPICAL CHARACTERISTICS

20k

1.00

16k

Group B

=10V

CE(sat)

- (Volts)

=100

0.80

- Gain

0.90

12k

Group A

0.70

0.60

0.01

0.1

0.001

0.01

0.1

Collector Current (Amps)

CE(sat)

v I

1.8

1.5

BE(sat)

- (Volts)

1.6

1.4

=5V

1.3

1.4

=100

1.2

1.0

0.01

0.1

1.1

0.01

0.1

Collector Current (Amps)

BE(sat)

v I

Single Pulse Test at T

amb

=25°C

ZTX600

BE(on)

v I

ZTX601

- Collector Current (Amps)

0.1

D.C.

100ms

10ms

1.0ms

0.1ms

0.01

0.001

100

1000

Collector Voltage (Volts)

Safe Operating Area

3-208

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ZTX601BSTZ Related Products

	ZTX601BSTZ	ZTX601BSTOA	ZTX601ASTZ	ZTX601ASTOB	ZTX601STZ	ZTX601ASTOA
Description	Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-W3	TO-92 COMPATIBLE, E-LINE PACKAGE-3	TO-92 COMPATIBLE, E-LINE PACKAGE-3	TO-92 COMPATIBLE, E-LINE PACKAGE-3	IN-LINE, R-PSIP-W3	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	_compli	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A	1 A	1 A	1 A
Collector-based maximum capacity	15 pF	15 pF	15 pF	15 pF	15 pF	15 pF
Collector-emitter maximum voltage	160 V	160 V	160 V	160 V	160 V	160 V
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	5000	5000	1000	1000	1000	1000
JESD-30 code	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e3	e3	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1	1	1
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power consumption environment	2.5 W	2.5 W	2.5 W	2.5 W	2.5 W	2.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Guideline	CECC	CECC	CECC	CECC	CECC	CECC
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	MATTE TIN	MATTE TIN	Matte Tin (Sn)	MATTE TIN
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40	40	40	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz
VCEsat-Max	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V

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