Super323™ SOT323 PNP SILICON POWER
™
(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
ZUMT717
*
*
*
*
*
*
500mW POWER DISSIPATION
I
C
CONT 1.5A
3A Peak Pulse Current
Excellent H
FE
Characteristics Up To 3A (pulsed)
Extremely Low Saturation Voltage
Extremely Low Equivalent On Resistance;
R
CE(sat)
APPLICATIONS
*
Negative boost functions in DC-DC converters
*
Supply line switching in mobile phones and pagers
*
Motor drivers in camcorders and mini disk players
DEVICE TYPE
ZUMT717
COMPLEMENT
ZUMT617
PARTMARKING
T71
R
CE(sat)
150mΩ at 1.25A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C*
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
VALUE
-12
-12
-5
-3
-1.25
-200
385 †
500 ‡
-55 to +150
UNIT
V
V
V
A
A
mA
mW
Operating and Storage Temperature T
j
:T
stg
Range
°C
† Recommended P
tot
calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT717
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
-25
-55
-110
-160
-185
-990
-850
300
300
200
125
75
30
490
450
340
250
140
80
220
15
50
135
MHz
pF
ns
ns
MIN.
-12
-12
-5
-10
-10
-10
-40
-100
-175
-215
-240
TYP.
MAX. UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
CONDITIONS.
I
C
= -100µA
I
C
= -10mA*
I
E
= -100µA
V
CB
=-10V
V
EB
=-4V
V
CES
=-10V
I
C
= -0.1A, I
B
= -10mA*
I
C
= -0.25A, I
B
=-10 mA*
I
C
= -0.5A, I
B
=-10 mA*
I
C
= -1A, I
B
= -50mA*
I
C
= -1.25A, I
B
= -100mA*
I
C
= -1.25A, I
B
= -100mA*
I
C
= -1.25A, V
CE
= 2V*
I
C
= -10mA, V
CE
=-2V*
I
C
= -0.1A, V
CE
= -2V*
I
C
= -0.5A, V
CE
= -2V*
I
C
= -1.25A, V
CE
=-2V*
I
C
= -2A, V
CE
= -2V*
I
C
= -3A, V
CE
= -2V*
I
C
= -50mA, V
CE
=-10 V
f= 100MHz
V
CB
= -10V, f=1MHz
V
CC
= -10V, I
C
=-1A
I
B1
=I
B2
=-100mA
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
-1100 mV
-1000 mV
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
ZUMT717
TYPICAL CHARACTERISTICS
0.4
+25°C
0.4
IC/IB=50
0.3
0.3
V
CE(sat)
- (V)
V
CE(sat)
- (V)
IC/IB=10
IC/IB=50
IC/IB=100
0.2
0.2
-55°C
+25°C
+100°C
+150°C
0.1
0.1
0
1m
10m
100m
1
10
0
1m
10m
100m
1
10
I
C
- Collector Current (A)
V
CE(sat)
v I
C
I
C
- Collector Current (A)
V
CE(sat)
v I
C
800
VCE=2V
1.0
0.8
IC/IB=50
h
FE
- Typical Gain
600
+100°C
V
BE(sat)
- (V)
0.6
0.4
0.2
-55°C
+25°C
+100°C
+150°C
400
+25°C
200
-55°C
0
1m
10m
100m
1
I
C
- Collector Current (A)
10
0
1m
10m
100m
1
10
h
FE
v I
C
I
C
- Collector Current (A)
V
BE(sat)
v I
C
1.0
0.8
10
I
C
- Collector Current (A)
V
BE(on)
- (V)
1
DC
1s
100ms
10ms
1ms
100µs
0.6
0.4
0.2
0
-55°C
+25°C
+100°C
+150°C
100m
1m
10m
100m
1
10
10m
100m
1
10
100
I
C
- Collector Current (A)
V
BE(on)
v I
C
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
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