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ZVN0124ASTZ

Description
Small Signal Field-Effect Transistor, 0.16A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size80KB,3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZVN0124ASTZ Overview

Small Signal Field-Effect Transistor, 0.16A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZVN0124ASTZ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionIN-LINE, R-PSIP-W3
Reach Compliance Codenot_compliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage240 V
Maximum drain current (ID)0.16 A
Maximum drain-source on-resistance16 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – MARCH 94
FEATURES
* 240 Volt V
DS
* R
DS(on)
=16Ω
APPLICATIONS
* Telephone handsets
ZVN0124A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
240
160
2
±
20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
240
1
3
20
10
100
500
16
100
85
20
7
7
8
16
8
MAX.
UNIT CONDITIONS.
V
V
nA
µA
µA
mA
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=250mA
V
DS
=25 V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=240 V, V
GS
=0
V
DS
=192 V, V
GS
=0V,
T=125°C
(2)
V
DS
=25 V, V
GS
=10V
V
GS
=10V,I
D
=250mA
V
DS
=25V,I
D
=250mA
I
D(on)
Static Drain-Source On-State R
DS(on)
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
3-350
(
3

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Description Small Signal Field-Effect Transistor, 0.16A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Field-Effect Transistor, 0.16A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Field-Effect Transistor, 0.16A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified? conform to conform to conform to
package instruction IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3
Reach Compliance Code not_compliant unknown not_compliant
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 240 V 240 V 240 V
Maximum drain current (ID) 0.16 A 0.16 A 0.16 A
Maximum drain-source on-resistance 16 Ω 16 Ω 16 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-W3 R-PSIP-W3 R-PSIP-W3
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 200 °C 200 °C 200 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Matte Tin (Sn) MATTE TIN Matte Tin (Sn)
Terminal form WIRE WIRE WIRE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 40 40
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maker Zetex Semiconductors - Zetex Semiconductors
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