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ZVP2106ZTA

Description
Power Field-Effect Transistor, 0.39A I(D), 60V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size33KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZVP2106ZTA Overview

Power Field-Effect Transistor, 0.39A I(D), 60V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

ZVP2106ZTA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.39 A
Maximum drain-source on-resistance5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)20 pF
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)4 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Maximum off time (toff)27 ns
Maximum opening time (tons)22 ns

ZVP2106ZTA Related Products

ZVP2106ZTA
Description Power Field-Effect Transistor, 0.39A I(D), 60V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
Is it Rohs certified? conform to
Maker Zetex Semiconductors
Reach Compliance Code not_compliant
ECCN code EAR99
Shell connection DRAIN
Configuration SINGLE
Minimum drain-source breakdown voltage 60 V
Maximum drain current (ID) 0.39 A
Maximum drain-source on-resistance 5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 20 pF
JESD-30 code R-PSSO-F3
JESD-609 code e3
Humidity sensitivity level 1
Number of components 1
Number of terminals 3
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
Polarity/channel type P-CHANNEL
Maximum pulsed drain current (IDM) 4 A
Certification status Not Qualified
surface mount YES
Terminal surface MATTE TIN
Terminal form FLAT
Terminal location SINGLE
Maximum time at peak reflow temperature 40
Transistor component materials SILICON
Maximum off time (toff) 27 ns
Maximum opening time (tons) 22 ns

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