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AT301211

Description
Variable Capacitance Diode, L Band, 8.2pF C(T), 30V, Silicon, Abrupt,
CategoryDiscrete semiconductor    diode   
File Size119KB,3 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

AT301211 Overview

Variable Capacitance Diode, L Band, 8.2pF C(T), 30V, Silicon, Abrupt,

AT301211 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionO-CEMW-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage30 V
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio4.2
Nominal diode capacitance8.2 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandL BAND
JESD-30 codeO-CEMW-N2
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor2400
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Varactor Diode ClassificationABRUPT

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