Variable Capacitance Diode, L Band, 8.2pF C(T), 30V, Silicon, Abrupt,
| Parameter Name | Attribute value |
| Maker | Advanced Semiconductor, Inc. |
| package instruction | O-CEMW-N2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Minimum breakdown voltage | 30 V |
| Diode Capacitance Tolerance | 10% |
| Minimum diode capacitance ratio | 4.2 |
| Nominal diode capacitance | 8.2 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| frequency band | L BAND |
| JESD-30 code | O-CEMW-N2 |
| Number of terminals | 2 |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND |
| Package form | MICROWAVE |
| Certification status | Not Qualified |
| minimum quality factor | 2400 |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | END |
| Varactor Diode Classification | ABRUPT |