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P4KE170C-GT3

Description
Trans Voltage Suppressor Diode, 400W, 138V V(RWM), Bidirectional, 1 Element, Silicon, DO-41, LEAD FREE, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size275KB,5 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

P4KE170C-GT3 Overview

Trans Voltage Suppressor Diode, 400W, 138V V(RWM), Bidirectional, 1 Element, Silicon, DO-41, LEAD FREE, PLASTIC PACKAGE-2

P4KE170C-GT3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Maximum breakdown voltage187 V
Minimum breakdown voltage153 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage138 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED








  


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Dim
A
B
C
D
Min
DO-41
Max
Min
Max
25.4
4.06 5.21
0.71 0.864
2.00 2.72
In mm
1.000
0.159 0.205
0.028 0.034
0.079 0.107
In inch


   

   

        

   

        

   

        

   

  















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