IC 1M X 9 FAST PAGE DRAM MODULE, 80 ns, SMA30, SIMM-30, Dynamic RAM
| Parameter Name | Attribute value |
| Maker | Toshiba Semiconductor |
| Parts packaging code | SIMM |
| package instruction | , |
| Contacts | 30 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| access mode | FAST PAGE |
| Maximum access time | 80 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD-30 code | R-XSMA-N30 |
| memory density | 9437184 bit |
| Memory IC Type | FAST PAGE DRAM MODULE |
| memory width | 9 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 30 |
| word count | 1048576 words |
| character code | 1000000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 1MX9 |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| Certification status | Not Qualified |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal form | NO LEAD |
| Terminal location | SINGLE |

| THM91000AS-80 | THM91000AL-80 | THM91000AL-10 | THM91000AS-70 | |
|---|---|---|---|---|
| Description | IC 1M X 9 FAST PAGE DRAM MODULE, 80 ns, SMA30, SIMM-30, Dynamic RAM | IC 1M X 9 FAST PAGE DRAM MODULE, 80 ns, SMA30, SIMM-30, Dynamic RAM | IC 1M X 9 FAST PAGE DRAM MODULE, 100 ns, SMA30, SIMM-30, Dynamic RAM | IC 1M X 9 FAST PAGE DRAM MODULE, 70 ns, SMA30, SIMM-30, Dynamic RAM |
| Parts packaging code | SIMM | SIMM | SIMM | SIMM |
| Contacts | 30 | 30 | 30 | 30 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| access mode | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE |
| Maximum access time | 80 ns | 80 ns | 100 ns | 70 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD-30 code | R-XSMA-N30 | R-XSMA-T30 | R-XSMA-T30 | R-XSMA-N30 |
| memory density | 9437184 bit | 9437184 bit | 9437184 bit | 9437184 bit |
| Memory IC Type | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE |
| memory width | 9 | 9 | 9 | 9 |
| Number of functions | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 |
| Number of terminals | 30 | 30 | 30 | 30 |
| word count | 1048576 words | 1048576 words | 1048576 words | 1048576 words |
| character code | 1000000 | 1000000 | 1000000 | 1000000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 1MX9 | 1MX9 | 1MX9 | 1MX9 |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal form | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | NO LEAD |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| Maker | Toshiba Semiconductor | - | Toshiba Semiconductor | Toshiba Semiconductor |