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SM8S18-E3/2D

Description
Trans Voltage Suppressor Diode, 5200W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB, PLASTIC PACKAGE-1
CategoryDiscrete semiconductor    diode   
File Size89KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
Download Datasheet Parametric View All

SM8S18-E3/2D Overview

Trans Voltage Suppressor Diode, 5200W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB, PLASTIC PACKAGE-1

SM8S18-E3/2D Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeDO-218
package instructionPLASTIC PACKAGE-1
Contacts1
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
Maximum breakdown voltage24.4 V
Minimum breakdown voltage20 V
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-218AB
JESD-30 codeR-PSSO-C1
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation5200 W
Number of components1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
polarityUNIDIRECTIONAL
Maximum power dissipation8 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage18 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formC BEND
Terminal locationSINGLE
Maximum time at peak reflow temperature40
SM8S Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Automotive Transient Voltage Suppressors
DO-218AB
0.628(16.0)
0.592(15.0)
0.539(13.7)
0.524(13.3)
0.116(3.0)
0.093(2.4)
0.413(10.5) 0.342(8.7)
0.374(9.5) 0.327(8.3)
d*
nte
ate
P
ed e
nd ang
xte R
E e
tag
Vol
0.413(10.5)
0.374(9.5)
Stand-off Voltage
10 to 43V
Peak Pulse Power
6600W (10/1000µs)
5200W (10/10,000µs)
Mounting Pad Layout
0.091(2.3)
0.067(1.7)
0.116(3.0)
0.093(2.4)
0.366(9.3)
0.343(8.7)
0.406(10.3)
0.382(9.7)
Dimensions in
inches and (millimeters)
LEAD 1
0.197(5.0)
0.185(4.7)
0.138(3.5)
0.098(2.5)
0.366(9.3)
0.343(8.7)
0.606(15.4)
0.583(14.8)
0.150(3.8)
0.126(3.2)
0.016 (0.4) Min.
0.028(0.7)
0.020(0.5)
0.098(2.5)
0.059(1.5)
*
Patent #’s:
4,980,315
5,166,769
5,278,095
LEAD 2/METAL HEATSINK
Features
• Ideally suited for load dump protection
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• High temperature stability due to unique oxide passiva-
tion and patented PAR
®
construction
• Integrally molded heatsink provides a very low thermal
resistance for maximum heat dissipation
• Low leakage current at T
J
= 175°C
• High temperature soldering guaranteed:
260°C for 10 seconds at terminals
• Meets ISO7637-2 surge spec.
• Low forward voltage drop
Mechanical Data
Case:
Molded plastic body, surface mount with heatsink
integrally mounted in the encapsulation
Terminals:
Plated, solderable per MIL-STD-750, Method 2026
Polarity:
Heatsink is anode
Mounting Position:
Any
Weight:
0.091 oz., 2.58 g
Packaging codes/options:
2D/750 per 13" Reel (16mm Tape),
anode towards sprocket hole, 4.5K/box
2E/750 per 13" Reel (16mm Tape),
cathode towards sprocket hole, 4.5K/box
Maximum Ratings and Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Peak pulse power dissipation with 10/1000µs waveform
10/10,000µs waveform
Steady state power dissipation
Peak pulse current with a 10/1000µs waveform
(1)
Peak forward surge current, 8.3ms single half sine-wave
Typical thermal resistance junction to case
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse derated above T
A
=25°C
Symbol
P
PPM
P
D
I
PPM
I
FSM
R
θJC
T
J
, T
STG
Value
6600
5200
8.0
See Table 1
700
0.90
-55 to +175
Unit
W
W
A
A
°C/W
°C
Document Number 88387
04-Jun-04
www.vishay.com
1

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