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2N2222AUAJANTX

Description
TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR
File Size134KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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2N2222AUAJANTX Overview

TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
DEVICES
LEVELS
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
2N2221AUBC *
*
Available to JANS quality level only.
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
2N2222AUBC *
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25°C
Operating & Storage Junction Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
op
, T
stg
Value
50
75
6.0
800
0.5
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
°C
TO-18 (TO-206AA)
2N2221A, 2N2222A
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
325
210
325
Unit
°C/W
Thermal Resistance, Junction-to-Ambient
2N2221A, L
2N2222A, L
R
θJA
2N2221AUA
2N2222AUA
2N2221AUB, UBC
2N2222AUB, UBC
Note:
Consult 19500/255 for thermal performance curves.
1. Derate linearly 3.08mW/°C above T
A
> +37.5°C
4 PIN
2N2221AUA, 2N2222AUA
2.
Derate linearly 4.76mW/°C above T
A
> +63.5°C
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
Collector-Base Cutoff Current
V
CB
= 75Vdc
V
CB
= 60Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0Vdc
V
EB
= 4.0Vdc
Collector-Emitter Cutoff Current
V
CE
= 50Vdc
T4-LDS-0060 Rev. 2 (100247)
V
(BR)CEO
I
CBO
50
10
10
10
10
50
Vdc
μAdc
ηAdc
μAdc
ηAdc
ηAdc
Symbol
Min.
Max.
Unit
3 PIN
2N2221AUB, 2N2222AUB
2N2221AUBC, 2N2222AUBC
(UBC = Ceramic Lid Version)
I
EBO
I
CES
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