V
CEO
= −230 V, I
C
= −15 A
Silicon PNP Epitaxial Planar Transistor
2SA2223
Description
The 2SA2223 is a PNP transistor of −230 V, −15 A.
The product has constant h
FE
characteristics in a wide
current range, providing high-quality audio sounds.
Data Sheet
Package
TO3P-3L
(4)
Features
●
●
●
●
●
●
●
●
Complementary to 2SC6145
LAPT (Linear Amplifier Power Transistor)
High Transition Frequency
Bare Lead Frame: Pb-free (RoHS Compliant)
V
CEO
----------------------------------------------------−230 V
I
C
--------------------------------------------------------- −15 A
f
T
------------------------------------------------------- 35 MHz
P
C
-------------------------------------------------------- 160 W
(1) (2) (3)
(2)(4)
(1) Base
(2) Collector
(3) Emitter
(4) Collector
(3)
Application
● Audio Power Amplifer
(1)
Not to scale
2SA2223-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
Nov. 14, 2017
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
1
2SA2223
Absolute Maximum Ratings
Unless otherwise specified, T
A
= 25 °C.
Parameter
Symbol
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Operating Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
T
C
= 25 °C
Conditions
Rating
−230
−230
−5
−15
−4
160
150
−55 to 150
Unit
V
V
V
A
A
W
°C
°C
Thermal Characteristics
Unless otherwise specified, T
A
= 25 °C.
Parameter
Symbol
Thermal Resistance
R
θJC
(Junction to Case)
Thermal Resistance
R
θJA
(Junction to Ambient)
Conditions
Min.
—
—
Typ.
—
—
Max.
0.78
35.7
Unit
°C/W
°C/W
Electrical Characteristics
Unless otherwise specified, T
A
= 25 °C.
Parameter
Symbol
Collector Cut-off Current
Emitter Cut-off Current
Collector to Emitter Breakdown
Voltage
DC Current Gain
Collector to Emitter Saturation
Voltage
Transition Frequency
Collector Output Capacitance
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE(sat)
f
T
C
OB
Conditions
V
CB
= −230 V, I
E
= 0 A
V
EB
= −5 V, I
C
= 0 A
I
C
= −25 mA
V
CE
= −4 V, I
C
= −5 A
I
C
= −5 A, I
B
= −0.5 A
V
CE
= −12 V, I
E
= 2 A
V
CB
= −10 V, I
E
= 0 A,
f = 1 MHz
Min.
—
—
−230
40
—
—
—
Typ.
—
—
—
—
—
35
500
Max.
−10
−10
—
140
−0.5
—
—
Unit
µA
µA
V
—
V
MHz
pF
h
FE
Rank
For the marking area of the rank, see the Marking Diagram.
Rank
R
h
FE
40 to 80
O
50 to 100
Y
70 to 140
2SA2223-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
Nov. 14, 2017
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
2
2SA2223
Rating and Characteristic Curves
Single Pulse
Collector Power Dissipation, P
C
(W)
Collector Current, I
C
(A)
Collector-Emitter Voltage, V
CE
(V)
Figure 1.
Safe Operating Area
Figure 2.
Ambient Temperature, T
C
(°C)
Power Dissipation vs. Ambient Temperature
Collector-Emitter Voltage, V
CE
(V)
Figure 3.
Collector Current vs. Collector-Emitter
Voltage
Figure 4.
Collector-Emitter Saturation Voltage, V
CE(sat)
(V)
Collector Current, I
C
(A)
Base Current, I
B
(V)
Collector-Emitter Saturation Voltage vs.
Base Current
2SA2223-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
Nov. 14, 2017
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
3
2SA2223
V
CE
= −4 V
V
CE
= −4 V
Collector Current, I
C
(A)
Base-Emitter Voltage, V
BE
(V)
Figure 5.
Collector Current vs. Base-Emitter Voltage
V
CE
= −12 V
Figure 6.
DC Current Gain, h
FE
Collector Current, I
C
(A)
DC Current Gain vs. Collector Current
Typ.
Transition frequency, f
T
Emitter Current, I
E
(A)
Figure 7.
Transition Frequency vs. Emitter Current
2SA2223-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
Nov. 14, 2017
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
4
2SA2223
Thermal Resistance, θ
J-A
(°C/W)
Pulse Width (ms)
Figure 8.
Transient Thermal Resistance
2SA2223-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
Nov. 14, 2017
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
5
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