DISCRETE SEMICONDUCTORS
DATA SHEET
BLV98CE
UHF power transistor
Product specification
March 1993
Philips Semiconductors
Product specification
UHF power transistor
FEATURES
•
Internal input matching to achieve high power gain
•
Implanted ballasting resistors an for optimum
temperature profile
•
Gold metallization ensures excellent reliability
DESCRIPTION
BLV98CE
NPN silicon planar epitaxial transistor in an SOT-171
envelope, intended for common emitter, class-AB
operation in radio transmitters for the 960 MHz
communications band. The transistor has a 6-lead flange
envelope, with a ceramic cap. All leads are isolated from
the flange.
QUICK REFERENCE DATA
RF performance up to T
h
= 25
°C
in a common emitter class-AB circuit.
MODE OF OPERATION
c.w. class-AB
PINNING - SOT171A
PIN
1
2
3
4
5
6
SYMBOL
e
e
b
c
e
e
DESCRIPTION
handbook, halfpage
f (MHz)
960
V
CE
(V)
24
P
L
(W)
15
G
P
(dB)
>
7.5
η
c
(%)
>
50
emitter
emitter
base
collector
emitter
emitter
Top view
2
4
6
c
b
1
3
5
MAM141
e
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
PARAMETER
collector base voltage
collector emitter voltage
emitter base voltage
collector current
collector current
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
open emitter
open base
open collector
DC or average
peak value
f
>
1 MHz
f
>
1 MHz
T
mb
= 25
°C
MIN.
−
−
−
−
−
−
−65
−
BLV98CE
MAX.
50
27
3.5
1.5
4.5
40
150
200
V
V
V
A
A
W
UNIT
°C
°C
THERMAL RESISTANCE
SYMBOL
R
thj-mb
R
th mb-h
PARAMETER
from junction to mounting base (RF)
from mounting base to heatsink
CONDITIONS
TYP.
−
−
MAX.
4.4
0.4
UNIT
K/W
K/W
handbook, halfpage
10
MDA449
handbook, halfpage
60
MDA450
IC
(A)
Tmb = 25
°C
1
Th = 70
°C
Ptot
(W)
40
(2)
(1)
20
10
−1
1
10
VCE (V)
10
2
0
0
40
80
120
Th (°C)
160
(1) DC or RF operation
(2) short-term operation during mismatch
Fig.2 DC SOAR.
Fig.3 Power/temperature derating.
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS
at T
j
= 25
°C
unless otherwise stated.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
C
cf
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance at f = 1 MHz
feedback capacitance at f = 1 MHz
collector-flange capacitance
CONDITIONS
open emitter
I
C
= 25 mA
open base
I
C
= 50 mA
open collector
I
E
= 5 mA
V
BE
= 0
V
CE
= 27 V
I
C
= 1 A
V
CE
= 20 V
I
E
= I
e
= 0
V
CB
= 24 V
I
C
= 0
V
CE
= 24 V
MIN.
50
27
3.5
−
15
−
−
−
TYP.
−
−
−
−
−
23
14
2
BLV98CE
MAX.
−
−
−
5
−
−
−
−
V
V
V
UNIT
mA
pF
pF
pF
handbook, halfpage
100
MDA451
hFE
80
100
handbook, halfpage
Cc
(pF)
80
MDA452
VCE = 24 V
20 V
60
60
40
40
20
20
0
0
1
2
3
IC (A)
4
0
0
10
20
VCB (V)
30
Fig.4
DC current gain as a function of collector
current; typical values.
Fig.5
Output capacitance as a function of V
CB
;
typical values.
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION
RF performance in a common emitter test circuit.
T
h
= 25
°C,
R
th mb-h
= 0.4 K/W unless otherwise specified.
MODE OF OPERATION
c.w. class-AB
f (MHz)
960
V
CE
(V)
24
I
C(ZS)
(mA)
30
P
L
(W)
15
G
P
(dB)
>
7.5
typ. 8.5
BLV98CE
η
c
(%)
>
50
typ. 55
handbook, halfpage
10
Gp
MDA453
(dB)
8
Gp
100
η
(%)
80
handbook, halfpage
30
MDA454
PL
(W)
20
6
η
60
4
40
10
2
20
0
0
5
10
15
20
PL (W)
25
0
0
0
2
4
6
PS (W)
8
Fig.6
Power gain and efficiency as a function of
load power; typical values.
Fig.7
Load power as a function of input power;
typical values.
Ruggedness in class-AB operation
The BLV98CE is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases, under
the following conditions: V
CE
= 24 V, I
C(ZS)
= 30 mA,
f = 960 MHz at rated output power.
March 1993
5
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