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ZTX605STZ

Description
Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size98KB,3 Pages
ManufacturerDiodes Incorporated
Environmental Compliance  
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ZTX605STZ Overview

Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX605STZ Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeTO-92
package instructionIN-LINE, R-PSIP-W3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time15 weeks
Maximum collector current (IC)1 A
Collector-emitter maximum voltage120 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)500
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz

ZTX605STZ Preview

NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 – MARCH 94
FEATURES
* 120 Volt V
CEO
* 1 Amp continuous current
* Gain of 2K at I
C
=1 Amp
* P
tot
= 1 Watt
ZTX604
ZTX605
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
ZTX604
MIN.
120
100
10
0.01
10
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
0.1
10
1.0
1.5
1.8
1.7
3-212
MAX.
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX605
MIN.
140
120
10
MAX.
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
E-Line
TO92 Compatible
ZTX604
120
100
10
4
1
1
5.7
-55 to +200
UNIT
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=100V
V
CB
=120V
V
CB
=100V,
T
amb
=100°C
V
CB
=120V,
T
amb
=100°C
V
EB
=8V
V
CES
=100V
V
CES
=120V
I
C
=250mA, I
B
=0.25mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, I
B
=1mA*
IC=1A, V
CE
=5V*
ZTX605
140
120
UNIT
V
V
V
A
A
W
mW/ °C
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
0.01
10
0.1
Emitter Cut-Off
Current
Colllector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
10
1.0
1.5
1.8
1.7
V
V
V
V
ZTX604
ZTX605
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX604
MIN.
Static Forward
h
FE
Current Transfer Ratio
2K
5K
2K
0.5K
150
MAX.
ZTX605
MIN.
2K
5K
2K
0.5K
150
90 Typical
15 Typical
0.5 Typical
1.6 Typical
MAX.
I
C
=50mA, V
CE
=5V
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
MHz
pF
pF
µ
s
µ
s
UNIT
CONDITIONS.
100K
100K
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
f
T
C
ibo
C
obo
t
on
t
off
I
C
=100mA, V
CE
=10V
f=20MHz
V
EB
=500mV, f=1MHz
V
CB
=10V, f=1MHz
I
C
=500mA, V
CE
=10V
I
B1
=I
B2
=0.5mA
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
Maximum Power Dissipation (W)
1.0
R
5
= 1MΩ
0.8 R
5
=
0.6
0.4
0.2
0
1
10
100
200
DC Conditions
ZTX604
ZTX605
R
5
= 100KΩ
R
5
= 20KΩ
V
CE
- Collector-Emitter Voltage (Volts)
Voltage Derating Graph
The maximum permissible operational temperature can be obtained from this graph using the
following equation
Power
(max ) −
Power
(
act
)
T
amb
(
max
)
=
0.0057
+25°
C
T
amb(max)
= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V
CE
and source resistance (R
S
)
Power(actual)= Actual power dissipation in users circuit
3-213
ZTX604
ZTX605
TYPICAL CHARACTERISTICS
1.8
1.6
-55°C
+25°C
+100°C
+175°C
2.5
V
CE(sat)
- (Volts)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
I
C
/I
B
=100
h
FE
- Gain normalised to 1 Amp
-55°C
+25°C
+100°C
2.0
1.5
V
CE
=5V
1.0
0.5
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
h
FE
v I
C
2.2
2.0
1.8
-55°C
+25°C
+100°C
+175°C
2.2
2.0
1.8
-55°C
+25°C
+100°C
V
BE(sat)
- (Volts)
1.4
1.2
1.0
0.8
0.6
0.4
0.01
0.1
1
10
I
C
/I
B
=100
V
BE
- (Volts)
1.6
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.01
0.1
1
10
V
CE
=5V
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
Single Pulse Test at T
amb
=25°C
10
V
BE(on)
v I
C
I
C
- Collector Current (Amps)
1.0
D.C.
1s
100ms
10ms
1.0ms
100µs
0.1
ZT
X6
04
ZTX605
0.01
1
10
100
1000
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
3-214
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