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OM5203DT

Description
8 A, SILICON, RECTIFIER DIODE, TO-257AA
Categorysemiconductor    Discrete semiconductor   
File Size19KB,2 Pages
ManufacturerETC2
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OM5203DT Overview

8 A, SILICON, RECTIFIER DIODE, TO-257AA

OM5201ST/RT/DT OM5203ST/RT/DT OM5217ST/RT/DT OM5234ST/RT/DT
OM5202ST/RT/DT OM5216ST/RT/DT OM5233ST/RT/DT
HERMETIC JEDEC TO-257AA HIGH EFFICIENCY,
CENTER-TAP RECTIFIER
16 Amp, 50 To 600 Volts, 35 To 50 ns trr
FEATURES
Very Low Forward Voltage
Very Fast Recovery Time
Hermetic Metal Package, JEDEC TO-257AA Outline
Low Thermal Resistance
Isolated Package
High Surge
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of products in a hermetic package is specifically designed for use at
power switching frequencies in excess of 100 kHz. The series combines two high
efficiency devices into one package, simplifying installation, reducing heat sink
hardware, and the need to obtain matched components. These devices are ideally
suited for Hi-Rel applications where small size and a hermetically sealed package
is required. Common anode configurations are also available. Common cathode
is standard.
ABSOLUTE MAXIMUM RATINGS
(Per Diode) @ 25°C
Peak Inverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 600 V
Maximum Average D.C. Output Current @ T
C
= 100° C . . . . . . . . . . . . . . . . . . . . 8A
Surge Current (Non-Repetitive 8.3 msec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . - 55° C to + 150° C
X.
3.2
SCHEMATIC
1
2
COMMON
ANODE
1
1
2
COMMON
CATHODE
OMXXXXST
3
DOUBLER
2
OMXXXXDT
MECHANICAL OUTLINE
.420
.410
.200
.190
.045
.035
.665
.645
.537
.527
1
2
3
3
OMXXXXRT
3
.150
.140
.430
.410
.038 MAX.
.750
.500
.005
Common cathode is standard. Contact the factory for performance
characteristics for common anode and doubler.
Z-Tab package also available.
.035
.025
.100 TYP.
.120 TYP.
4 11 R5
Supersedes 1 07 R4
3.2 - 43

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